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NP88N075DUE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075DUE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075DUE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N075DUE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075DUE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075DUE-S12-AYNote1,2

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N075EUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N075EUE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N075KUE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.5mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=8200pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NP88N075DUE

  • 制造商:

    NEC

  • 制造商全稱(chēng):

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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NEC
24+
TO-262
8866
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NEC
23+
TO-262
12226
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NEC
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NEC
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NEC
18+
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NEC
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TO-263
10000
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NEC
21+
SOT-263
10000
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NEC
TO-263
22+
6000
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日本NEC
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NEC
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更多NP88N075DUE供應(yīng)商 更新時(shí)間2025-1-30 15:30:00