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NP88N055KHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N055KHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP88N055KHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055KHE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP88N055KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP88N055KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055KHE-E1-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055KHE-E2-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP88N055KHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
17+
TO-263
31518
原裝正品 可含稅交易
 詢價
RENESAS/瑞薩
22+
TO-263
21000
原廠原包裝。假一罰十?？砷_13%增值稅發(fā)票。
 詢價
NEC
24+
TO-263
8866
詢價
NEC
23+
TO-263
11835
全新原裝
 詢價
NEC
6000
面議
19
TO-263
 詢價
NEC
2023+
TO-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
RENESAS/瑞薩
2021+
TO-263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VB
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS/瑞薩
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多NP88N055KHE供應(yīng)商 更新時間2025-2-6 14:00:00

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