九九视频国产,a级毛片免费观看永久,欧美成在线观

首頁 >NP88N055CHE>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NP88N055CHE	文件：332.77 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NP88N055CHE	文件：207.82 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP88N055CHE	文件：294.3 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055CHE	文件：994.67 Kbytes Page：7 Pages	N-Channel 60 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
NP88N055CHE-S12-AZ	文件：207.82 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP88N055CHE-S12-AZ	文件：294.3 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055CHE-S12-AZNote1,2	文件：294.88 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055CLE	文件：421.44 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055CLE	文件：333.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NP88N055CLE	文件：213.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP88N055DHE	文件：294.3 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055DHE	文件：207.82 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP88N055DHE	文件：241.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NP88N055DLE	文件：421.44 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055DLE	文件：242.58 Kbytes Page：22 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NP88N055DLE	文件：213.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP88N055EHE	文件：305.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NP88N055EHE	文件：207.82 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
NP88N055EHE	文件：294.3 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N055ELE	文件：306.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC

12 3 >>>

詳細參數(shù)

型號：
NP88N055CHE
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-220AB

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導體有限公司	NP88N055CHE	NEC	24+	TO-220AB	8866		詢價
深圳市恒創(chuàng)達實業(yè)有限公司	NP88N055CHE	NEC	17+	TO-220	6200		詢價
深圳市博浩通科技有限公司	NP88N055CHE	NEC	23+	TO-220AB	12157	全新原裝	詢價
深圳市科恒偉業(yè)電子有限公司	NP88N055CHE	日本NEC	1822+	TO220	9852	只做原裝正品假一賠十為客戶做到零風險!!	詢價
深圳市近平電子有限公司	NP88N055CHE	NEC	6000	面議	19	TO-220AB	詢價
深圳市納艾斯科技有限公司	NP88N055CHE	NEC	2020+	TO220	80000	只做自己庫存,全新原裝進口正品假一賠百,可開13%增	詢價
深圳市威爾健半導體有限公司	NP88N055CHE	AVAGO/安華高	23+	SOP-16	69820	終端可以免費供樣,支持BOM配單!	詢價
深圳市振芯物聯(lián)科技有限公司	NP88N055CHE	NEC	22+	TO220	28600	只做原裝正品現(xiàn)貨假一賠十一級代理	詢價
深圳市國宇半導體科技有限公司	NP88N055CHE	N	23+	P-TO220-3-1	10000	公司只做原裝正品	詢價
京海半導體(深圳)有限公司	NP88N055CHE	VB	21+	P-TO220-3-1	10000	原裝現(xiàn)貨假一罰十	詢價

更多NP88N055CHE供應商更新時間2024-11-14 15:30:00

詳細參數(shù)

相關規(guī)格書

相關庫存