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首頁 >NP88N04NHE>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NP88N04NHE	文件：313.85 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04NHE	文件：242.42 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04NHE	文件：227.48 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04NHE	文件：5.67799 Mbytes Page：6 Pages	Product Scout Automotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04NHE-S18-AY	文件：227.48 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04NHE-S18-AY	文件：313.85 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04NHE-S18-AYNote1	文件：314.44 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04CHE	文件：333.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04CHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04CHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04DHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04DHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04DHE	文件：242.43 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04EHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04EHE	文件：306.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP88N04EHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04KHE	文件：227.48 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP88N04KHE	文件：313.85 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP88N04KHE	文件：306.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
NP88N04NHE
制造商：
NEC
制造商全稱：
NEC
功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市星辰微電科技有限公司	NP88N04NHE	RENESAS/瑞薩	22+	TO-262	12500	瑞薩全系列在售,終端可出樣品	詢價(jià)
深圳市芯皇電子有限公司	NP88N04NHE	RENESAS/瑞薩	22+	TO-262	9000	專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	NP88N04NUG	NEC	24+	TO-262	8866		詢價(jià)
深圳市博浩通科技有限公司	NP88N04NUG	NEC	23+	TO-262	12223	全新原裝	詢價(jià)
深圳市鵬和科技有限公司	NP88N04NUG	NEC	24+	TO-262	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市近平電子有限公司	NP88N04NUG	NEC	6000	面議	19	TO-262	詢價(jià)
上海市鑫鴻達(dá)電子	NP88N04NUG	RENESAS/瑞薩	2022+		4200	全新原裝貨期兩周	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	NP88N04NUG	GENITOP	23+	SOP-8	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
深圳市賽美科科技有限公司	NP88N04NUG	RENESAS		ROHS	8560	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	NP88N04NUG	RENESAS/瑞薩	22+	TO-220	100000	代理渠道/只做原裝/可含稅	詢價(jià)

更多NP88N04NHE供應(yīng)商更新時(shí)間2024-12-28 11:00:00

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