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AP9952GP-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP9952GP-HF_14

Simple Drive Requirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AUIRF9952Q

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

AUIRF9952Q

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRF9952QTR

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

AUIRF9952QTR

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEM9952A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,3.7A,RDS(ON)=80m?@VGS=10V. RDS(ON)=110m?@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100m?@VGS=-10V. RDS(ON)=150m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOchenmko

力勤股份有限公司

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

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SR
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5000
原裝正品,假一罰十
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APEC
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5000
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APEC
20+
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36900
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APEC/富鼎
23+
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28800
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APEC/富鼎
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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AP
2022+
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12888
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APEC
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68900
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APEC
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6000
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ir
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80000
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20000
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更多AP9952GP-HF供應(yīng)商 更新時(shí)間2025-1-26 15:36:00

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