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CEM9952A

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■30V,3.7A,RDS(ON)=80m?@VGS=10V. RDS(ON)=110m?@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100m?@VGS=-10V. RDS(ON)=150m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOchenmko

力勤股份有限公司

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952TRPBF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

KDS9952A

DualN&P-ChannelEnhancementModeFieldEffectTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEM9952A

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    Dual Enhancement Mode Field Effect Transistor(N and P Channel)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
24+
SOP8
1000
詢價(jià)
CEM
2016+
SOP8
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
CET
17+
SOIC-8
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
CEM
2020+
SOP-8
1024
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
CEM(華瑞)
2015+
SOP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
CEM(華瑞)
24+
3.9mm
3600
絕對(duì)原裝!現(xiàn)貨熱賣!
 詢價(jià)
CET
09+
SOP8
6000
絕對(duì)原裝自己現(xiàn)貨
 詢價(jià)
CET
24+
SOP8
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CEM
21+
SOP8
8100
原裝現(xiàn)貨假一賠十
 詢價(jià)
更多CEM9952A供應(yīng)商 更新時(shí)間2025-1-22 16:30:00

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