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APL1001P

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV?SINGLEDIEISOTOP?PACKAGE

ADPOW

Advanced Power Technology

APN1001

CircuitModelsforPlasticPackagedMicrowaveDiodes

Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne

SKYWORKSSkyworks Solutions Inc.

思佳訊美國思佳訊公司

APT1001

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBLC

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1001RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1001RBVFR

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner

ADPOW

Advanced Power Technology

APT1001RBVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    APL1001P

  • 制造商：

    ADPOW

  • 制造商全稱：

    Advanced Power Technology

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

供應(yīng)商型號品牌批號封裝庫存備注價格
APT
24+
MODULE
2100
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!!!
 詢價
ADPOW
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
APT
23+
MODULE
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
APT
23+
MODULE
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
APL
22+
SOT-89
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
APL
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
ANPEC/茂達
24+
SMD
6743
新進庫存/原裝
 詢價
APL
23+
TSOP
5000
原裝正品,假一罰十
 詢價
ANPEC
2016+
TO-252
6523
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
APL
2339+
TO-252
5650
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
更多APL1001P供應(yīng)商 更新時間2025-2-3 15:46:00

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