首頁>APT1001RBLC>規(guī)格書詳情
APT1001RBLC中文資料ADPOW數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
APT1001RBLC |
| 功能描述 | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| 文件大小 |
35.76 Kbytes |
| 頁面數(shù)量 |
2 頁 |
| 生產(chǎn)廠商 | Advanced Power Technology |
| 企業(yè)簡(jiǎn)稱 |
ADPOW |
| 中文名稱 | Advanced Power Technology官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-26 14:10:00 |
APT1001RBLC規(guī)格書詳情
Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds.
? Identical Specifications: TO-247 or Surface Mount D3PAK Package
? Lower Gate Charge & Capacitance
? Easier To Drive
? Faster switching
? 100 Avalanche Tested
產(chǎn)品屬性
- 型號(hào)：
APT1001RBLC
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
APT |
22+ |
TO-247 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
APT |
24+ |
TO-247 |
564 |
詢價(jià) | |||
APT |
TO-3P |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IXYS/艾賽斯 |
24+ |
TO247 |
2686 |
原裝正品,歡迎來電咨詢! |
詢價(jià) | ||
APTMICROSEMI |
23+ |
TO-247B |
27682 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳 |
詢價(jià) | ||
MICROSEMI |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | |||
APT |
24+ |
8866 |
詢價(jià) | ||||
Microsemi Corporation |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Microsemi Corporation |
21+ |
TO2473 |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |
