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APM9926CKC-TR

N-Channel Enhancement Mode MOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM9926COC-TR

N-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM9926KC-TR

N-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM9926OC-TR

N-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

BLM9926

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

CED9926

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●20V,26A,RDS(ON)=30m?@VGS=4.5V. RDS(ON)=40m@V?GS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEG9926

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9926

DualN-ChannelEnhancementModeFieldEffectTransistor

Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9926

DualN-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM9926

DualN-ChannelEnhancementModeMOSFET

Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit

ZPSEMI

ZP Semiconductor

詳細(xì)參數(shù)

  • 型號(hào)：

    APM9926CKC-TR

  • 制造商：

    ANPEC

  • 制造商全稱：

    Anpec Electronics Coropration

  • 功能描述：

    N-Channel Enhancement Mode MOSFET

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19960
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21546
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ANPEC
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ANPEC
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庫(kù)存剛更新加微13425146986
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ANPEC
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ANPEC
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更多APM9926CKC-TR供應(yīng)商 更新時(shí)間2025-1-24 15:00:00

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