零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel Enhancement Mode MOSFET N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme | ANPECAnpec Electronics Coropration 茂達電子茂達電子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme | ANPECAnpec Electronics Coropration 茂達電子茂達電子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海貝嶺上海貝嶺股份有限公司 | Belling | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30m?@VGS=4.5V. RDS(ON)=40m@V?GS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
DualN-ChannelEnhancementModeMOSFET Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit | ZPSEMI ZP Semiconductor | ZPSEMI | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,7A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=34mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Features VDS(V)=20V ID=7A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Features VDS(V)=20V ID=7A RDS(ON) | EVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30m?@VGS=4.5V. RDS(ON)=40m@V?GS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT6Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. *Smallflatpackage.(SO-8) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT26Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
DualN-ChannelMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | CHAMPChampion Microelectronic Corp. 虹冠虹冠電子工業(yè)股份有限公司 | CHAMP | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES |
詳細參數(shù)
- 型號:
APM9926K
- 制造商:
ANPEC
- 制造商全稱:
Anpec Electronics Coropration
- 功能描述:
N-Channel Enhancement Mode MOSFET
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ANPEC |
24+ |
SOP8 |
9750 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
ANPEC/茂達電子 |
2021+ |
SOP8 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
ANPEC |
2016+ |
SOP8 |
6528 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
ANPEC |
2016+ |
SOP8 |
3900 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ANPEC |
2020+ |
SOP8 |
44 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ANPEC |
22+ |
SOP8 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
ANPEC |
22+ |
SOP8 |
21031 |
原裝正品現(xiàn)貨,可開13個點稅 |
詢價 | ||
ANPEC |
2020+ |
SOP8 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ANPEC |
2023+ |
SOP-8 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
ANPEC |
24+ |
SMD8 |
35200 |
一級代理分銷/放心采購 |
詢價 |
相關(guān)規(guī)格書
更多- APM9926OC-TR
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- APM-C3A1
- APM-C3A1-S
- APM-C3B1-H
- APM-C3D1
- APM-C3E1
- APM-C3J1
相關(guān)庫存
更多- APM9928
- APM9928KC-TR
- APM9930C
- APM9930CKC-TR
- APM9932
- APM9932CK
- APM9932CKC-TRG
- APM9932CKC-TU
- APM9933
- APM9933KC-TU
- APM9935K
- APM9935KC-TRL
- APM9935KC-TUL
- APM9945K
- APM9945KC-TRL
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- APM9988COC-TU
- APM-A3A1
- APM-A3B1
- APM-A3D1
- APM-A3E1
- APM-A3J1
- APMB3A1
- APM-B3B1-H
- APM-B3D1-H
- APM-B3E1-H
- APM-B3K1
- APM-C3A1-H
- APM-C3B1
- APM-C3B1-S
- APM-C3D1-H
- APM-C3E1-H
- APM-C3J1-S