首頁 >APT1001RBVRG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
100AvalancheTested PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100AvalancheTested PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GIGABITRJ45LANMAGNETIC | ABRACON Abracon Corporation | ABRACON | ||
10mmwideIP67&IP68LEDlightstrip | OPTOSUPPLY OptoSupply International | OPTOSUPPLY | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBmin.at1.0W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
HighPowerFixedAttenuators(Radiatorbuilt-in) HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt | HIROSEHirose Electric Company 廣瀨日本廣瀨電機株式會社 | HIROSE | ||
PLLSynthesizerinSMDpackage | AXTALAdvanced XTAL Products advanced XTAL Products | AXTAL | ||
VCO-VoltageControlledOscillator | AXTALAdvanced XTAL Products advanced XTAL Products | AXTAL | ||
LowCost1x2Inch10WWideInputRangeDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
EVERLIGHTELECTRONICECO.,LTD. | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
10W,5VDCInputCompact,DualOutputDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
Compact1x2Inch10WWideInputRangeDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
B1000RWSERIES | MPD MPD (Memory Protection Devices) | MPD | ||
BIG-FOOT-1001 | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
cordset-40-wayterminal-oneendflyingleads-forM340I/O-10m | SCHNEIDERSchneider Electric 施耐德施耐德電氣 | SCHNEIDER | ||
cordset-20-wayterminal-oneendflyingleads-forM340I/O-10m | SCHNEIDERSchneider Electric 施耐德施耐德電氣 | SCHNEIDER | ||
SILICONBRIDGERECTIFIERS PRV:50-1000Volts Io:10Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC |
詳細參數(shù)
- 型號:
APT1001RBVRG
- 功能描述:
MOSFET N-CH 1000V 11A TO-247
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
POWER MOS V®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MICROCHIP(美國微芯) |
23+ |
TO-247 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
APT |
24+ |
TO-247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
NA |
19+ |
64124 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | |||
MS |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
Microse |
23+ |
TO-247 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
Microse |
2020+ |
TO-247 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
MICROSEMI |
21+ |
TO247 |
1654 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
APT |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
APT |
22+ |
TO-247B |
6000 |
十年配單,只做原裝 |
詢價 | ||
Microchip |
21+ |
15000 |
只做原裝 |
詢價 |
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