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APT1004R2BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004R2BN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004R2AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004R2CN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004R2GN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004R2KN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004R2KN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

SML1004R2GXN

4THGENERATIONMOSFETN??HANNELENHANCEMENTMODEHIGHVOLTAGEISOLATEDPOWERMOSFETS

SEME-LAB

Seme LAB

詳細(xì)參數(shù)

  • 型號(hào):

    APT1004R2BN

  • 制造商:

    ADPOW

  • 制造商全稱:

    Advanced Power Technology

  • 功能描述:

    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT
24+
8866
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APT
22+
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8200
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APT
24+
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564
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ADPOW
23+
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19960
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APT
22+
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8000
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APT
23+
2800
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MICROCHIP/微芯
24+
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18000
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APT
16+
NA
8800
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APT
24+
NA
3500
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APT
2020+
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350000
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更多APT1004R2BN供應(yīng)商 更新時(shí)間2025-1-26 16:30:00