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10086

AMERICANCORDSET;230cmLONGNEMA5-15PTOIEC60320C13,LEFTHANDED

POWERDYNAMICS

PowerDynamics, Inc

A10086CHNF

ContinuousHingewithClamps,Type4

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

A10086SC

ScrewCover,Type12

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

APT10086BLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT10086BVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.86Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT10086BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT10086BVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.86Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT10086BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

APT10086SLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT10086SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

詳細參數

  • 型號：

    APT10086BVFRG

  • 功能描述：

    MOSFET N-CH 1000V 13A TO-247

  • RoHS：

    是

  • 類別：

    分離式半導體產品 >> FET - 單

  • 系列：

    POWER MOS V®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
MICROCHIP(美國微芯)
23+
TO-247
7793
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
Microchip
21+
15000
只做原裝
 詢價
APT
TO-3P
68900
原包原標簽100%進口原裝常備現貨!
 詢價
microchip
23+
15420
原包裝原標現貨,假一罰十,
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現貨
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現貨
 詢價
MICROCHIP/微芯
24+
SMT
18000
誠以養(yǎng)德,用芯做事,全新原裝原盒原標出貨。
 詢價
24+
N/A
58000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
MICROCHIP(美國微芯)
23+
TO-247
7087
原裝現貨,免費送樣,可開原型號稅票。提供技術支持
 詢價
APT
24+
TO-3P
328
原裝正品,歡迎來電咨詢!
 詢價
更多APT10086BVFRG供應商 更新時間2025-1-23 16:12:00

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