首頁 >APT10050JNQ>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltage PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?IdenticalSpecific | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
10.3x10.3mmMax.square,5.0mmMax.height. | Toko TOKO, Inc | Toko |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
24+ |
SMT |
18000 |
誠以養(yǎng)德,用芯做事,全新原裝原盒原標(biāo)出貨。 |
詢價(jià) | ||
APT |
23+ |
模塊 |
360 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
APT |
23+ |
模塊 |
3562 |
詢價(jià) | |||
APT |
24+ |
36 |
詢價(jià) | ||||
APT |
23+ |
模塊 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
APT |
24+ |
模塊 |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
場(chǎng)效應(yīng) |
1950+ |
980 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | |||
Microch |
20+ |
NA |
33560 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
APT |
2018+ |
module |
6000 |
全新原裝正品現(xiàn)貨,假一賠佰 |
詢價(jià) |
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