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APT20M45BVRG

POWER MOS V?

POWERMOSV? POWERMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasepackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. F

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT20M45BVRG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=56A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.045Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT20M45BVFR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT20M45BVFR

PowerMOSVisanewgenerationofhighvoltageN-Channelenhancement

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT20M45BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT20M45BVR

POWERMOSV?

POWERMOSV? POWERMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasepackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. F

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT20M45BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT20M45SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT20M45SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast

ADPOW

Advanced Power Technology

CL20M45

SMDCurrentLimitingDiodes

Diotec

Diotec Semiconductor

詳細參數(shù)

  • 型號：

    APT20M45BVRG

  • 功能描述：

    MOSFET N-CH 200V 56A TO-247

  • RoHS：

    是

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    POWER MOS V®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
Microchip Technology
24+
TO-247 [B]
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
MICROSEMI/美高森美
1825+
TO247-3
3031
原裝正品 可含稅交易
 詢價
MICROSEMI/美高森美
23+
TO247-3
12500
全新原裝現(xiàn)貨,假一賠十
 詢價
MICROSEMI/美高森美
24+
TO247-3
26100
所有報價以當天為準
 詢價
MICROSEMI/美高森美
24+
TO247-3
18500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
MICROSEMI
21+
TO/247-3
3031
原裝現(xiàn)貨假一賠十
 詢價
MICROSEMI/美高森美
21+
TO247-3
120000
長期代理優(yōu)勢供應(yīng)
 詢價
MICROSEMI
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
MICROSEMI
21+
TO/247-3
3031
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
 詢價
更多APT20M45BVRG供應(yīng)商 更新時間2025-2-26 20:41:00

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