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APT5010B2LC

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

POWERMOSVI? PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliver

ADPOW

Advanced Power Technology

APT5010B2LC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

APT5010B2LL

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT5010B2LL

POWERMOS7MOSFET

POWERMOS7?MOSFET PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalon

ADPOW

Advanced Power Technology

APT5010B2LL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

POWERMOS7? PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit

ADPOW

Advanced Power Technology

APT5010B2LL

PowerMOS7isanewgenerationoflowloss,highvoltage,N-Channel

POWERMOS7?MOSFET PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalon

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT5010B2VFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT5010B2VR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=47A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT5010B2VR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

APT5010B2VR

NewT-MAX??Package(Clip-mountedTO-247Package)

ADPOW

Advanced Power Technology

APT5010B2VRG

NewT-MAX??Package(Clip-mountedTO-247Package)

ADPOW

Advanced Power Technology

DPD5010B2

D-SUBMINIATUREDUALPORT,STACKED,RIGHTANGLE

ADAM-TECHAdam Technologies, Inc.

亞當科技亞當科技股份有限公司

詳細參數

  • 型號:

    APT5010B2LC

  • 制造商:

    ADPOW

  • 制造商全稱:

    Advanced Power Technology

  • 功能描述:

    Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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更多APT5010B2LC供應商 更新時間2024-11-20 17:07:00