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APT6030SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT6030SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

ASITPV6030

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: ?CommonEmitter ?PG=9.5dBat35W/860MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

ATFN6030A

CrystalFilter

CTSCTS Electronic Components

西迪斯西迪斯公司

BD6030GSW

NegativepowersupplyforCCDcameraofmobilephones

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

C6030

Ultra-compactIndustrialPC

BECKHOFFBeckhoff Automation GmbH & Co. KG

倍福自動(dòng)化

CBT-BGA-6030

Excellentsignalintegrityathighfrequencies

IRONWOOD

Ironwood Electronics.

CEB6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM6030LPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT40Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CK6030

MAGNETICPOWDERCORES

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

CKRA6030

CrydomsCKRSeries

CKRSeries CrydomsCKRSeriesSolidStateRelaysweredevelopedtooffertheadvantagesofsemiconductorswitchingtechnologyinastandard22.5mmindustrialpackage.Quickandeasyinstallationiscoupledwithlowdrivepowerrequirementsandefficient,reliablepowerSCRoutput.BoxClamptermi

crydom

Crydom Inc.,

CKRA6030

DINRailMount

crydom

Crydom Inc.,

CKRA6030

THEGLOBALEXPERTINSOLIDSTATERELAYTECHNOLOGY

DPASeries ?16PinDIPSSR ?Ratingsto1A@280VAC ?SCRoutput ?Voltageorcurrent-controlinput ?Zero-crossing(resistiveloads)output

crydom

Crydom Inc.,

CKRA6030

DINrailmount

crydom

Crydom Inc.,

CKRA6030

DINRailMount

crydom

Crydom Inc.,

詳細(xì)參數(shù)

  • 型號(hào):

    APT6030SN

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-263AB

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更多APT6030SN供應(yīng)商 更新時(shí)間2024-12-30 16:30:00