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首頁 >APT6060BN>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
APT6060BN	文件：359.9 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT6060BNR	文件：336.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT6060CN	文件：297.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT6060DN	文件：331.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AXIOM6060	文件：312.53 Kbytes Page：14 Pages	QualifiedaccordingtoMIL-PRF-55310Level???	AXTALAdvanced XTAL Products advanced XTAL Products	AXTAL
AXIOM6060A	文件：211.16 Kbytes Page：14 Pages	Ultra-LowPhaseNoise120MHzOCXOforSpaceApplication	AXTALAdvanced XTAL Products advanced XTAL Products	AXTAL
BLP6060A	文件：76.24 Kbytes Page：2 Pages	BLP6060A BLP6060A	BellingSHANGHAI BELLING CO., LTD. 上海貝嶺上海貝嶺股份有限公司	Belling
C6060A	文件：75.27 Kbytes Page：1 Pages	17SP227/30TCPEPVCComputerCable	GENERALGeneral Cable Technologies Corporation 通用電氣公司美國通用電氣公司	GENERAL
CEB6060	文件：510.01 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060L	文件：516.75 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060L	文件：405.18 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060L	文件：544.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB6060LR	文件：534.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060N	文件：426.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060N	文件：624.91 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB6060R	文件：81.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6060R	文件：527.84 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6060L	文件：785.85 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6060N	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6060N	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET

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詳細參數(shù)

型號：
APT6060BN
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鵬和科技有限公司	APT6060BN	APT	24+	TO-247	5000	只做原裝公司現(xiàn)貨	詢價
瀚佳科技(深圳)有限公司	APT6060BN	APT	18+	TO-247	2050	公司大量全新原裝正品隨時可以發(fā)貨	詢價
深圳市興燦科技有限公司	APT6060BN	APT	24+	TO-247	1300		詢價
深圳市威爾健半導體有限公司	APT6060BN	APT	23+	TO-247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市匯萊威科技有限公司	APT6060BN		APT	TO-3P	68900	原包原標簽100%進口原裝常備現(xiàn)貨!	詢價
貿澤芯城（深圳）電子科技有限公司	APT6060BN	ISC/固電	23+	TO-3PN	5000	原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳	詢價
深圳市勝彬電子有限公司	APT6060BN	APT	22+	TO-247	8000	原裝正品支持實單	詢價
深圳市創(chuàng)新跡電子有限公司	APT6060BN	APT	23+	TO-247	7300	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳誠思涵科技有限公司	APT6060BN	APT	24+	TO-247	41	原裝正品,假一罰十!	詢價
深圳市安富世紀電子有限公司	APT6060BN	APT	23+	TO-247	7300	專注配單,只做原裝進口現(xiàn)貨	詢價

更多APT6060BN供應商更新時間2024-12-21 10:20:00

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