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首頁 >APT8030JVFR>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
APT8030JVFR	文件：70.07 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	ADPOW Advanced Power Technology	ADPOW
APT8030JVFR	文件：69.08 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	ADPOW Advanced Power Technology	ADPOW
APT8030JVFR_05	文件：69.08 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	ADPOW Advanced Power Technology	ADPOW
APT8030JVR	文件：67.79 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	ADPOW Advanced Power Technology	ADPOW
APT8030LVFR	文件：63.46 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.	ADPOW Advanced Power Technology	ADPOW
APT8030LVFR	文件：62.59 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	ADPOW Advanced Power Technology	ADPOW
APT8030LVFR	文件：67.37 Kbytes Page：4 Pages	POWERMOSV PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT8030LVFR	文件：328.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
APT8030LVFRG	文件：67.37 Kbytes Page：4 Pages	POWERMOSV PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT8030LVR	文件：60.38 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi	ADPOW Advanced Power Technology	ADPOW
APT8030LVR	文件：328.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AT8030	文件：341.32 Kbytes Page：10 Pages	2X15W2.0channelanti-breakingClassDamplifier	YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD 永?？?/span>深圳市永?？悼萍加邢薰?/p>	YONGFUKANG
AT8030TT	文件：341.32 Kbytes Page：10 Pages	2X15W2.0channelanti-breakingClassDamplifier	YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD 永福康深圳市永?？悼萍加邢薰?/p>	YONGFUKANG
BF8030	文件：401.02 Kbytes Page：1 Pages	DCBlowerFan80x80x30mm	COOLCOXCoolCox Limited All rights reserved. 奇凌電子東莞市奇凌電子科技有限公司	COOLCOX
C8030	文件：36.44 Kbytes Page：2 Pages	RG59/UTypeCoaxial&2/C18AWGSiameseCCTV-PlenumCable	GENERALGeneral Cable Technologies Corporation 通用電氣公司美國通用電氣公司	GENERAL
CEB8030	文件：520.559 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB8030L	文件：520.559 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP8030L	文件：520.559 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CHM8030LANPT	文件：219.83 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT75Ampere FEATURE ???????Smallflatpackage.(D2PAK) HighdensitycelldesignforextremelylowRDS(ON). Ruggedandreliable. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOchenmko 力勤股份有限公司	CHENMKO
CZ8030	文件：40.6 Kbytes Page：1 Pages	RFAMPLIFIER	SPECTRUM Spectrum Instrumentation GmbH	SPECTRUM

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詳細(xì)參數(shù)

型號：
APT8030JVFR
功能描述：
MOSFET N-CH 800V 25A SOT-227
RoHS：
是
類別：
半導(dǎo)體模塊 >> FET
系列：
POWER MOS V®
標(biāo)準(zhǔn)包裝：
10
系列：
*

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	APT8030JVFR	MICROCHIP(美國微芯)	23+	-	7793	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市匯萊威科技有限公司	APT8030JVFR	APT	19+	MODULE	1290	主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126	詢價
深圳市毅創(chuàng)騰電子科技有限公司	APT8030JVFR	APT	23+	模塊	240	全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!	詢價
深圳市昌和盛利電子有限公司	APT8030JVFR	APT	23+	模塊	3562		詢價
深圳市壹芯創(chuàng)科技有限公司	APT8030JVFR	APT	22+	原廠原封	8200	原裝現(xiàn)貨庫存.價格優(yōu)勢!!	詢價
深圳市錦喆鴻電子有限公司	APT8030JVFR	aptchip(愛普特微)	21+	模塊	12588	原裝正品,一級品牌代理	詢價
中天科工半導(dǎo)體（深圳）有限公司	APT8030JVFR	Microch	20+	NA	33560	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市納艾斯科技有限公司	APT8030JVFR	APT	2018+	module	6000	全新原裝正品現(xiàn)貨,假一賠佰	詢價
深圳市維爾達(dá)電子有限公司	APT8030JVFR	APT	2023+	MODULE	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
瀚佳科技(深圳)有限公司	APT8030JVFR	APT	18+		2173	公司大量全新正品隨時可以發(fā)貨	詢價

更多APT8030JVFR供應(yīng)商更新時間2024-12-23 13:43:00

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