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AS4LC2M8S1

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-10TC

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-10TC

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-12TC

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-7TC

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-8TC

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective

ALSC

Alliance Semiconductor Corporation

AS4LC2M8S1-8TC

3.3V 2M ? 8/1M ? 16 CMOS synchronous DRAM

Features ?Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress ?Allsignalsreferencedtopositiveedgeofclock,fullysynchronous ?DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

詳細(xì)參數(shù)

  • 型號：

    AS4LC2M8S1

  • 制造商：

    ALSC

  • 制造商全稱：

    Alliance Semiconductor Corporation

  • 功能描述：

    3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
ALSC
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價
ALLIANCE
23+
TSOP-44
5177
現(xiàn)貨
 詢價
ALLIANCE
2023+
TSOP-44
50000
原裝現(xiàn)貨
 詢價
ASI
23+
SOJ24
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
ALLINCE
22+
TSOP-44
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
ALLINCE
23+
TSOP-44
98000
詢價
ALLANCE
2016+
SOJ
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
ASI
2020+
SOJ24
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
ASI
21+
SOJ24
16
原裝現(xiàn)貨假一賠十
 詢價
ASI
SOJ24
16
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多AS4LC2M8S1供應(yīng)商 更新時間2024-12-25 15:00:00

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