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AS6C4008-55BIN

512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

GENERALDESCRIPTION TheAS6C4008isa4,194,304-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas524,288wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEAT

ALSC

Alliance Semiconductor Corporation

AS6C4008-55BIN

512K X 8 BIT LOW POWER CMOS SRAM

FEATURES Accesstime:55ns Lowpowerconsumption:Operatingcurrent:30mA(TYP.)Standbycurrent:4μA(TYP.)Single2.7V~5.5VpowersupplyAlloutputsTTLcompatible Fullystaticoperation Tri-stateoutput Dataretentionvoltage:1.5V(MIN.)AllproductsROHSCompliant Package:32-p

ALSC

Alliance Semiconductor Corporation

AS6C4008-55BIN

包裝：卷帶（TR） 封裝/外殼：36-TFBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 4MBIT PARALLEL 36TFBGA

Alliance Memory

Alliance Memory, Inc.

AS6C4008-55BINTR

包裝：卷帶（TR） 封裝/外殼：36-TFBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 4MBIT PARALLEL 36TFBGA

Alliance Memory

Alliance Memory, Inc.

AS6C4008-55PCN

512KX8BITLOWPOWERCMOSSRAM

FEATURES Accesstime:55ns Lowpowerconsumption:Operatingcurrent:30mA(TYP.)Standbycurrent:4μA(TYP.)Single2.7V~5.5VpowersupplyAlloutputsTTLcompatible Fullystaticoperation Tri-stateoutput Dataretentionvoltage:1.5V(MIN.)AllproductsROHSCompliant Package:32-p

ALSC

Alliance Semiconductor Corporation

AS6C4008-55PCN

512KX8BITLOWPOWER512KX8BITLOWPOWERCMOSSRAM

GENERALDESCRIPTION TheAS6C4008isa4,194,304-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas524,288wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEAT

ALSC

Alliance Semiconductor Corporation

AS6C4008-55SIN

512KX8BITLOWPOWER512KX8BITLOWPOWERCMOSSRAM

GENERALDESCRIPTION TheAS6C4008isa4,194,304-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas524,288wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEAT

ALSC

Alliance Semiconductor Corporation

AS6C4008-55SIN

512KX8BITLOWPOWERCMOSSRAM

FEATURES Accesstime:55ns Lowpowerconsumption:Operatingcurrent:30mA(TYP.)Standbycurrent:4μA(TYP.)Single2.7V~5.5VpowersupplyAlloutputsTTLcompatible Fullystaticoperation Tri-stateoutput Dataretentionvoltage:1.5V(MIN.)AllproductsROHSCompliant Package:32-p

ALSC

Alliance Semiconductor Corporation

AS6C4008-55STIN

512KX8BITLOWPOWER512KX8BITLOWPOWERCMOSSRAM

GENERALDESCRIPTION TheAS6C4008isa4,194,304-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas524,288wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEAT

ALSC

Alliance Semiconductor Corporation

AS6C4008-55STIN

512KX8BITLOWPOWERCMOSSRAM

FEATURES Accesstime:55ns Lowpowerconsumption:Operatingcurrent:30mA(TYP.)Standbycurrent:4μA(TYP.)Single2.7V~5.5VpowersupplyAlloutputsTTLcompatible Fullystaticoperation Tri-stateoutput Dataretentionvoltage:1.5V(MIN.)AllproductsROHSCompliant Package:32-p

ALSC

Alliance Semiconductor Corporation

AS6C4008-55TIN

512KX8BITLOWPOWERCMOSSRAM

FEATURES Accesstime:55ns Lowpowerconsumption:Operatingcurrent:30mA(TYP.)Standbycurrent:4μA(TYP.)Single2.7V~5.5VpowersupplyAlloutputsTTLcompatible Fullystaticoperation Tri-stateoutput Dataretentionvoltage:1.5V(MIN.)AllproductsROHSCompliant Package:32-p

ALSC

Alliance Semiconductor Corporation

AS6C4008-55TIN

512KX8BITLOWPOWER512KX8BITLOWPOWERCMOSSRAM

GENERALDESCRIPTION TheAS6C4008isa4,194,304-bitlowpowerCMOSstaticrandomaccessmemoryorganizedas524,288wordsby8bits.Itisfabricatedusingveryhighperformance,highreliabilityCMOStechnology.Itsstandbycurrentisstablewithintherangeofoperatingtemperature. FEAT

ALSC

Alliance Semiconductor Corporation

AS6C4008-55ZIN

512KX8BITLOWPOWERCMOSSRAM

FEATURES Accesstime:55ns Lowpowerconsumption:Operatingcurrent:30mA(TYP.)Standbycurrent:4μA(TYP.)Single2.7V~5.5VpowersupplyAlloutputsTTLcompatible Fullystaticoperation Tri-stateoutput Dataretentionvoltage:1.5V(MIN.)AllproductsROHSCompliant Package:32-p

ALSC

Alliance Semiconductor Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號：

    AS6C4008-55BIN

  • 制造商：

    Alliance Memory, Inc.

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲容量：

    4Mb（512K x 8）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時(shí)間 - 字，頁：

    55ns

  • 電壓 - 供電：

    2.7V ~ 5.5V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    36-TFBGA

  • 供應(yīng)商器件封裝：

    36-TFBGA（6x8）

  • 描述：

    IC SRAM 4MBIT PARALLEL 36TFBGA

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
AllianceM
2022+
20
全新原裝 貨期兩周
 詢價(jià)
Alliance Memory, Inc.
21+
48-TFBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營
 詢價(jià)
Alliance Memory, Inc.
21+
36-TFBGA(6x8)
56200
一級代理/放心采購
 詢價(jià)
Alliance Memory
1921+
TFBGA-36(6x8)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價(jià)
Alliance Memory
2117+
TFBGA-36(6x8)
315000
480個(gè)/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
 詢價(jià)
ALLIANCE
20+
36-BGA
480
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
ALLIANCEMEMORYINC
21+
NA
4130
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
 詢價(jià)
Alliance
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價(jià)
Alliance Memory
21+
A/N
1252
只做原裝,常備優(yōu)勢庫存,詢價(jià)必回
 詢價(jià)
Alliance Memory
2021+
TFBGA-36(6x8)
499
詢價(jià)
更多AS6C4008-55BIN供應(yīng)商 更新時(shí)間2024-10-25 9:50:00

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