AS7C3513集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional description

The AS7C513 is a high performance CMOS 524,288-bit Static Random Access Memory (SRAM) organized as 32,768 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/8/10 ns are ideal for high performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.

Features

? Organization: 32,768 words × 16 bits

? High speed

- 10/12/15/20 ns address access time

- 5/6/8/10 ns output enable access time

? Low power consumption

- Active: 504 mW max (20 ns cycle)

- Standby: 18 mW max, CMOS I/O

- Very low DC component in active power

? 2.0V data retention

? Equal access and cycle times

? Easy memory expansion with CE, OE inputs

? TTL-compatible, three-state I/O

? 44-pin JEDEC standard package

- 400 mil SOJ

- 400 mil TSOP II

? Upward compatibility

- 64K×16 (AS7C1026)

- 256K×16 (AS7C4098)

? Center power and ground pins

? ESD protection ≥ 2000 volts

? Latch-up current ≥ 200 mA

? 3.3V version available (AS7C3513)