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ASI2302

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI2302isDesignedforGeneralpurposeClassCPowerAmplifierApplicationsupto3000MHz. FEATURES: ?PG=9.5dBmin.at2W/2300MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

AT-2302

StriplineMountingFixedAttenuators

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會社

ATN2302

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

AUIRS2302S

Floatingchanneldesignedforbootstrapoperation

IRF

International Rectifier

BB-2302

InsulKrimp??PiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),14-16AWG,BlueInsulator,Tape

MOLEX4Molex Electronics Ltd.

莫仕

BB-2302T

InsulKrimp??PiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),14-16AWG,BlueInsulator,Tape

MOLEX4Molex Electronics Ltd.

莫仕

BC2302

Plastic-EncapsulateMOSFETS

Description TheBC2302usesadvancedtrenchtechnologytoprovideexcellentR lowgatechargeandoperationwithgatevoltagesaslowas2.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. DS(ON), Application Batteryprotection Loadswitch Uni

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC2302ET

N-ChannelMOSFET

Feature ?20VN-ChannelMOSFETHighDenseDesign. ?RDS(ON)=280m?(typ.)@VGS=4.5V ?RDS(ON)=360m?(typ.)@VGS=2.5V ?ReliableandRugged ?ESDProtected Applications ?PortableEquipmentandBatteryPowerSystems

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC2302W

Plastic-EncapsulateMOSFETS

FEATURE ?TrenchFETPowerMOSFET APPLICATIONS ?LoadSwitchforPortableDevices ?DC/DCConverter

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BLM2302

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

BM2302

N-Channel1.25-W,2.5-VMOSFET

booklyBookly Micro electronic

百力微電子上海百力微電子股份有限公司

BU2302

CRtimer

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BU2302F

CRtimer

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CES2302

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2302

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters ?LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CES2302A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHT2302PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.8Ampere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *

CHENMKOchenmko

力勤股份有限公司

CHT2302WPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

CJ2302

N-ChannelEnhancementModeMOSFET

ZPSEMI

ZP Semiconductor

CJ2302

N-Channel20-V(D-S)MOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

詳細(xì)參數(shù)

  • 型號:

    ASI2302

  • 制造商:

    ASI

  • 制造商全稱:

    ASI

  • 功能描述:

    NPN SILICON RF POWER TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ASI
22+
DIP-8
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
詢價(jià)
ASI
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢
詢價(jià)
ASI
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
24+
DIP
51
詢價(jià)
AMIS
SOP-20L
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
AMIS
24+
SOP-20L
123
原裝正品,假一罰十!
詢價(jià)
AURORA
24+
QFP/208
5000
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
詢價(jià)
AURORASYSTEMS
2000
MQFP240
9765
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價(jià)
INTERFACE
23+
NA
406
專做原裝正品,假一罰百!
詢價(jià)
AURORASYSTEM
2023+
MQFP
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
更多ASI2302供應(yīng)商 更新時(shí)間2024-12-31 16:10:00