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AUIRFR4105

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105

AdvancedPlanarTechnology

AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105TR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRL

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTRR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

C4105A

7C227/30TCPVCPVCCOMMUNICATIONCABLE

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國(guó)通用電氣公司

CD4105

ZENERDIODECHIPS

?1N4099THRU1N4135AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/435 ?ZENERDIODECHIPS ?ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE ?0.5WATTCAPABILITYWITHPROPERHEATSINKING ?ELECTRICALLYEQUIVALENTTO1N4099THRU1N4135 ?COMPATIBLEWITHALLWIREBONDINGANDDIEATTAC

CDI-DIODE

Compensated Deuices Incorporated

CDLL4105

LEADLESSPACKAGEFORSURFACEMOUNT

?1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWCURRENTOPERATIONAT250μA ?METALLURGICALLYBONDED ?DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CHA4105-QDG

2-4GHzDriver

UMS

United Monolithic Semiconductors

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
dc14
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
dc14
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
dc14
7000
詢價(jià)
IOR
17+
TO-223
75
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
IOR
23+
TO-223
10000
原裝正品現(xiàn)貨
詢價(jià)
IOR
21+
SOP8
630
原裝現(xiàn)貨假一賠十
詢價(jià)
IR
23+
TO-220
18888
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳
詢價(jià)
InfineonTechnologies
23+
TO-220
66800
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源!
詢價(jià)
Infineon Technologies
24+
TO-220
36500
一級(jí)代理/放心采購(gòu)
詢價(jià)
Infineon
2021+
SOIC
57500
科研單位合格供應(yīng)商!現(xiàn)貨庫(kù)存
詢價(jià)
更多AUIFR4105供應(yīng)商 更新時(shí)間2025-1-9 14:00:00