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AUIRFL024NTR中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

AUIRFL024NTR
廠商型號(hào)

AUIRFL024NTR

功能描述

Advanced Planar Technology Low On-Resistance

文件大小

190.25 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 16:42:00

AUIRFL024NTR規(guī)格書詳情

V(BR)DSS 55V

RDS(on) max. 75mΩ

ID 2.8A

Description

Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

? Advanced Planar Technology

? Low On-Resistance

? Dynamic dV/dT Rating

? 150°C Operating Temperature

? Fast Switching

? Fully Avalanche Rated

? Repetitive Avalanche Allowed up to Tjmax

? Lead-Free, RoHS Compliant

? Automotive Qualified*

產(chǎn)品屬性

  • 型號(hào):

    AUIRFL024NTR

  • 功能描述:

    MOSFET Automotive MOSFET 55V, 2.8A, 75 mOhm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
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只有原裝原裝,支持BOM配單
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只做原裝現(xiàn)貨
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15年原裝正品企業(yè)
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一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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