首頁 >AUIRFR3806TRR>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AUIRFR3806TRR | HEXFETPower MOSFET | IRF International Rectifier | IRF | |
AUIRFR3806TRR | Advanced Process Technology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
QL(AZ4)MicroLimitSwitch FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
MiniatureSurfaceMountTransformer | PCA PCA ELECTRONICS INC. | PCA | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
N-ChannelMOSFET Features VDS(V)=60V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
AUIRFR3806TRR
- 功能描述:
MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-252 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
7000 |
詢價(jià) | |||
IR |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價(jià) | ||
IR |
1816+ |
TO-252 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) |
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相關(guān)庫存
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