首頁 >AUIRFS3806STRRPBF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
QL(AZ4)MicroLimitSwitch FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
MiniatureSurfaceMountTransformer | PCA PCA ELECTRONICS INC. | PCA | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
N-ChannelMOSFET Features VDS(V)=60V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
N-ChannelMOSFET Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
N-ChannelMOSFET Features VDS(V)=60V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2022+ |
SOT263 |
24800 |
原廠代理 終端免費提供樣品 |
詢價 | ||
IR |
23+ |
SOT263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
SOT263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
SOT263 |
7000 |
詢價 | |||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營)! |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
D2PAK |
115000 |
800個/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
INFINEON |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon/英飛凌 |
21+ |
D2PAK |
6000 |
原裝現(xiàn)貨正品 |
詢價 |
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