| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
B280B | 2A 80V Schottky diode | SUNMATE | ||
B280B | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | |
2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | DIODES Diodes Incorporated | DIODES | ||
包裝：卷帶（TR） 封裝/外殼：DO-214AA，SMB 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 80V 2A SMB | PAM Diodes Incorporated | PAM | ||
SurfaceMountSchottkyBarrierDiodes Features: *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0UtilizingFlame RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofML-S-19500/228 *Lowleakagecurrent | WEITRON Weitron Technology | WEITRON | ||
2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER | DIODES Diodes Incorporated | DIODES | ||
FREDDiode(VRRM1000VIFRMS5.5A55nsSoftrecoverycharacteristics) FREDDiode PreliminaryData ●VRRM1000V ●IFRMS5.5A ●trr55ns ●Softrecoverycharacteristics | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems) NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA ?fT=7,5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SiliconNPNPlanarRFTransistor Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems) NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA ?fT=7,5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems) NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SiliconNPNPlanarRFTransistor Features ?Lowpowerapplications ?Lownoisefigure ?Hightransitionfrequency Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lowpowerapplications ?Lownoisefigure ?Hightransitionfrequency Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,lowpoweramplifiersatcollectorcurrentsfrom0.2mAto8mA ?Hermeticallysealedmicrowavepackage ?fT=7.2GHz,F=2.5dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
UHFamplifiermodule DESCRIPTION TheBGY280isapoweramplifiermoduleinaSOT559Aleadlesspackagewithaplasticcap.Thedimensionsare13.75x11x1.7mm.Themoduleconsistsoftwoseparatedline-ups.OneforGSM900andoneforGSM1800.Internalpowercontrol,inputandoutputmatching. FEATURES ?Dualband | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
詳細(xì)參數(shù)
- 型號：
B280B
- 制造商：
CHENDA
- 制造商全稱：
Chendahang Electronics Co., Ltd
- 功能描述：
Reverse Voltage - 20 to 200 Volts Forward Current - 2.0 Amperes
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SUNMATE(森美特) |
2019+ROHS |
SMB(DO-214AA) |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費送樣 |
詢價 | ||
MDD |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
DIODES |
08+ |
DO-214AA |
90000 |
絕對全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢價 | ||
DIODES/美臺 |
22+ |
SMB |
90000 |
正規(guī)代理渠道假一賠十 |
詢價 | ||
DIODES/美臺 |
1936+ |
SMB |
6852 |
只做原裝正品現(xiàn)貨或訂貨!假一賠十! |
詢價 | ||
DIODES |
20+ |
DO-214AA |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
DIODES |
1809+ |
SMB |
16750 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
DIODES/美臺 |
23+ |
NA |
6000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
DIODES |
22+ |
NA |
12080 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
DIODES/美臺 |
22+ |
SMB |
30000 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- B280M
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- B28250BSAAA1
- B28250BSABA1
- B28250BSBAA1
- B28250BSBBA1
- B28250BTAAA1
- B28250BTABA1
- B28250BTBAA1
- B28250BTBBA1
- B28-253-B-4
- B2825BAAAA1
- B2825BAABA1
- B2825BABBA1
- B2825BBAAA1
- B2825BBABA1
- B2825BBBAA1
- B2825BBBBA1
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