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BC3407

Plastic-EncapsulateMOSFETS

GeneralDescription TheBC3407usesadvancedtrenchtechnologytoprovideexcellent RDS(on)withlowgatecharge.Thisdeviceissuitableforuseasaload switchorinPWMapplications.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC3407-CAR

Plastic-EncapsulateMOSFETS

GeneralDescription -CARforautomotiveandotherapplicationsrequiringuniquesiteand AEC-Q101qualifiedandPPAPcapable. TheBC3407usesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BCL3407DW

Plastic-EncapsulateMOSFETS

GeneralDescription TheBCL3407DWusesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BLM3407

P-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

BM3407

P-Channel30V(D-S)4AP-MOSFET

booklyBookly Micro electronic

百力微電子上海百力微電子股份有限公司

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-5.1A,RDS(ON)=48m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. RDS(ON)=115m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=115mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CJ3407

P-ChannelEnhancementModeFieldEffectTransistor

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJ3407

SOT-23Plastic-EncapsulateMOSFETS

ZPSEMIZP Semiconductor

至尚臻品

CJK3407

P-Channel30-V(D-S)MOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

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