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BA301N-D

Low Capacitance and Insertion Loss

BencentShenzhen Bencent Electronics Co., Ltd.

檳城電子深圳市檳城電子股份有限公司

BAV301

SiliconEpitaxialPlanarDiodes

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導體

BAV301

SURFACEMOUNTSWITCHINGDIODE

Features FastSwitchingSpeed SurfaceMountPackageIdeallySuitedforAutomaticInsertion ForGeneralPurposeSwitchingApplications HighConductance FitsonSOD-323/SOT-23Footprint

TRSYS

Transys Electronics

BAV301

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES ?FastswitchingSpeed. ?SurfaceMountPackageIdeallySuitedForAutomaticInsertion. ?SiliconEpitaxalPlanarConstruction. ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強茂股份有限公司

BAV301

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導體

BAV301

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

PANJITPan Jit International Inc.

強茂股份有限公司

BAV301

SwitchingDiodes

Features ?SavingSpace ?SiliconEpitaxialPlanarDiodes ?HermeticSealedParts ?FitsontoSOD-323/SOT-23footprints ?ElectricaldataidenticalwiththedevicesBAV100…BAV103 ?MoistureSensitivityLevel1 ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSComplian

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

BAV301

120VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

BAV301

SwitchingDiode

Features ?SiliconEpitaxialPlanarDiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD323/SOT23footprints ?Electricaldataidenticalwiththedevices BAV100...BAV103/BAV200...BAV203 Applications ?Generalpurpose MechanicalData ?Case:MicroMELFGlassCase ?Weigh

Good-Ark

GOOD-ARK Electronics

BAV301

SURFACEMOUNTFASTSWITCHINGDIODE

Features ●Hermeticsealedparts ●Savingspace ●SiliconEpitaxialPlanarDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

BAV301

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導體

BAV301-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導體

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB-301

BaseboardforoneTMCM-301/TMCM-341andupto3TMCM-035

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB301C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301CAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

供應商型號品牌批號封裝庫存備注價格
Bencent
24+
SMD
608
原裝正品,假一罰十!
詢價
BENCENT
2021+
1812-300V
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
SEMITEH
21+
4532
2000
原裝現(xiàn)貨假一賠十
詢價
BENCENT
24+
1812
2450000
原裝現(xiàn)貨
詢價
Semitehelec
2021+
4532
2000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
Semitehelec
2201+
4532
1724
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
Semitehelec
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價
集電通
23+
提供BOM配單服務
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
集電通
23+
提供BOM配單服務
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
JDT/集電通
24+
SMD
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價
更多BA301N-D供應商 更新時間2024-12-29 15:25:00