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BAV302-TR

Small Signal Switching Diodes, High Voltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV302-TR

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:2-SMD,無(wú)引線 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE GP 150V 250MA MICROMELF

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

BAV302-TR3

Small Signal Switching Diodes, High Voltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV302-TR3

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:2-SMD,無(wú)引線 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE GP 150V 250MA MICROMELF

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

BB302C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC302

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BC302

BipolarNPNDeviceinaHermeticallysealedTO39

SEME-LAB

Seme LAB

BC302

NPNEPITAXIALPLANARSILICONTRANSISTORS

NPNEPITAXIALPLANARSILICONTRANSISTORS NPNSILICONLOW-AND-MEDIUMPOWERTRANSISTORS.

CDIL

Continental Device India Limited

BC302

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BD302

iscSiliconPNPPowerTransistor

DESCRIPTION ?DCCurrentGain-:hFE=30(Min.)@IC=-3A ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=-45V(Min.) ?ComplementtoTypeBD301 APPLICATIONS ?Designedforaudiooutputstagesupto25W,verticaldeflectioncircuitsincolorTVreceivers.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD302N

30AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD302N

30AmpereStandardTypeNegativeBlockRectifierDiodesforAutomotiveAlternators

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

BD302P

30AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD302P

30AmpereStandardTypePositiveBlockRectifierDiodesforAutomotiveAlternators

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

BD-A302ND-A

greenchips,whicharemadefromGaPonGaPsubstrate.

BRIGHTBRIGHT LED ELECTRONICS CORP

步來(lái)特電器寧波步來(lái)特電器有限公司

BD-E302RD

greenchips,whicharemadefromGaPonGaPsubstrate

BRIGHTBRIGHT LED ELECTRONICS CORP

步來(lái)特電器寧波步來(lái)特電器有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    BAV302-TR

  • 制造商:

    Vishay General Semiconductor - Diodes Division

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 系列:

    Automotive, AEC-Q101

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 二極管類型:

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io):

    250mA

  • 速度:

    快速恢復(fù) =< 500ns,> 200mA(Io)

  • 不同?Vr、F 時(shí)電容:

    1.5pF @ 0V,1MHz

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    2-SMD,無(wú)引線

  • 供應(yīng)商器件封裝:

    MicroMELF

  • 工作溫度 - 結(jié):

    175°C(最大)

  • 描述:

    DIODE GP 150V 250MA MICROMELF

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY(威世)
23+
MicroMELF
2669
特價(jià)優(yōu)勢(shì)庫(kù)存質(zhì)量保證穩(wěn)定供貨
詢價(jià)
VISHAY(威世)
23+
MicroMELF
6825
百分百原裝正品,可原型號(hào)開票
詢價(jià)
VISHAY
24+
SMD
2500
原裝正品,假一罰十!
詢價(jià)
VIS
24+
30000
詢價(jià)
Vishay
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
VISHAY
2020+
LL34-08
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
VI1
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
VISHA
21+
LL34-0805
25000
原裝現(xiàn)貨假一賠十
詢價(jià)
VISHAY
1809+
DO-213
6675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
Vishay(威世)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
更多BAV302-TR供應(yīng)商 更新時(shí)間2024-12-23 11:58:00