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BAW101Q

DUALSURFACEMOUNTSWITCHINGDIODE

DIODES

Diodes Incorporated

BAW101S

Highvoltagedoublediode

DESCRIPTION TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanartechnologyandencapsulatedinasmallSOT363plasticSMDpackage. FEATURES ?SmallplasticSMDpackage ?Highswitchingspeed:max.50ns ?Highcontinuousreversevoltage:300V ?Ele

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAW101S

Highvoltagedoublediode

DESCRIPTION TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanartechnologyandencapsulatedinasmallSOT363plasticSMDpackage. FEATURES ?SmallplasticSMDpackage ?Highswitchingspeed:max.50ns ?Highcontinuousreversevoltage:300V ?Ele

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BAW101S

HIGHVOLTAGEDUALSWITCHINGDIODE

Features ?FastSwitchingSpeed:max.50ns ?HighReverseBreakdownVoltage:300V ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:150nAatRoomTemperature ?Lead,HalogenandAntimonyFree,RoHSCompliant(Note3) ?GreenDevice(Note4)

DIODES

Diodes Incorporated

BAW101S

HighVoltageDoubleDiode

Features ●SmallplasticSMDpackage ●Highswitchingspeed:max.50ns ●Highcontinuousreversevoltage:300V ●Electricallyinsulateddiodes

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BAW101S

Highvoltagedoublediode

1.Generaldescription TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanar technologyandencapsulatedinasmallSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Highswitchingspeed:max.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAW101S-Q

Highvoltagedoublediode

1.Generaldescription TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanar technologyandencapsulatedinasmallSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Highswitchingspeed:max.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAW101V

HIGHVOLTAGEDUALSWITCHINGDIODE

Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V

DIODES

Diodes Incorporated

BB-101

BaseboardforTMCM-101

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB101C

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101CAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101MAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BBP-101

BandpassFilter

MINI

Mini-Circuits

BBP-101+

BandpassFilter

MINI

Mini-Circuits

BBS-101-G-A

MACHINEDBOARDSTACKINGSTRIPS

Samtec

Samtec, Inc

BC101

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BCR101

NPNSiliconDigitalTransistor

?Switchingcircuit,inverter,interfacecircuit,drivercircuit ?Builtinbiasresistor(R1=100k?,R2=100k?)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    BAW101 T/R

  • 功能描述:

    二極管 - 通用,功率,開(kāi)關(guān) DIODE SW TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 產(chǎn)品:

    Switching Diodes

  • 峰值反向電壓:

    600 V

  • 正向連續(xù)電流:

    200 A

  • 最大浪涌電流:

    800 A

  • 恢復(fù)時(shí)間:

    2000 ns

  • 正向電壓下降:

    1.25 V

  • 最大反向漏泄電流:

    300 uA

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    ISOTOP

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
SOD323
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
23+
SOD323
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
23+
SOD323
7000
詢價(jià)
NXP
2339+
N/A
13523
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
NEXPERIA
1809+
SOT-143
6675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
NXP
22+
SOT143B
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
NXP
21+
SOT143B
13880
公司只售原裝,支持實(shí)單
詢價(jià)
PH
22+
NA
30000
原裝現(xiàn)貨假一罰十
詢價(jià)
NXP
2023+環(huán)?,F(xiàn)貨
33000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
詢價(jià)
PHI
2405+
原廠封裝
12500
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐
詢價(jià)
更多BAW101 T/R供應(yīng)商 更新時(shí)間2025-1-6 15:09:00