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BAW101S-Q

Highvoltagedoublediode

1.Generaldescription TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanar technologyandencapsulatedinasmallSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Highswitchingspeed:max.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAW101V

HIGHVOLTAGEDUALSWITCHINGDIODE

Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V

DIODES

Diodes Incorporated

BB-101

BaseboardforTMCM-101

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB101C

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101CAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101MAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BBP-101

BandpassFilter

MINI

Mini-Circuits

詳細參數(shù)

  • 型號：

    BAW101S T/R

  • 功能描述：

    二極管 - 通用，功率，開關(guān) DIODE SW TAPE-7

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 產(chǎn)品：

    Switching Diodes

  • 峰值反向電壓：

    600 V

  • 正向連續(xù)電流：

    200 A

  • 最大浪涌電流：

    800 A

  • 恢復(fù)時間：

    2000 ns

  • 正向電壓下降：

    1.25 V

  • 最大反向漏泄電流：

    300 uA

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    ISOTOP

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
24+
N/A
21322
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NXP/恩智浦
24+
SOT-363
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
NXP/恩智浦
2447
SOT-363
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
NXP
21+
SOT-363
3000
原裝現(xiàn)貨假一賠十
 詢價
NEXPERIA
1809+
SSOP-6
16750
就找我吧!--邀您體驗愉快問購元件!
 詢價
NXP/恩智浦
22+
SOT-363
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
NXP/恩智浦
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP
22+
6TSSOP
9000
原廠渠道,現(xiàn)貨配單
 詢價
NXP/恩智浦
2022
SOT-363
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多BAW101S T/R供應(yīng)商 更新時間2025-2-13 10:24:00

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