首頁(yè) >BAW101S/DG>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Highvoltagedoublediode 1.Generaldescription TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanar technologyandencapsulatedinasmallSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Highswitchingspeed:max. | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
HIGHVOLTAGEDUALSWITCHINGDIODE Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V | DIODES Diodes Incorporated | DIODES | ||
BaseboardforTMCM-101 | TRINAMIC TRINAMIC Motion Control GmbH & Co. KG. | TRINAMIC | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT- | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT- | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BandpassFilter | MINI Mini-Circuits | MINI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
24+ |
SOT-363 |
18000 |
原裝正品,假一罰十! |
詢價(jià) | ||
NXP |
16+ |
NA |
8800 |
誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
NXP |
23+ |
SOT-363 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
NXP |
21+ |
SOT-363 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
NXP |
2020+ |
SOT-363 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
NXP |
21+ |
SOT-363 |
18000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
SOT-363 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NXP/恩智浦 |
2022 |
SOT-363 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
NXP |
08+ |
SOT-363 |
18000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
NXP |
23+ |
SOT-363 |
20500 |
原廠原裝正品 |
詢價(jià) |
