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BC807

Marking:5D-;Package:SOT-23;PNP general purpose transistor

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES ?Highcurrent(max.500mA) ?Lowvoltage(max.45V). APPLICATIONS ?Generalpurposeswitchingandamplification.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC807

PNP SURFACE MOUNT TRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817)

TRSYS

Transys Electronics

BC807

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23PNPSILICONPLANARMEDIUMPOWERTRANSISTORS PARTMARKINGDETAILS BC807-5DZBC808-5HZ BC807-16-5AZBC808-16-5EZ BC807-25-5BZBC808-25-5FZ BC807-40-5CZBC808-40-5GZ COMPLEMENTARYTYPESBC807-BC817

Zetex

Zetex Semiconductors

BC807

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BC807

Small Signal Transistors (PNP)

Features ?PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. ?Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. ?Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. ?Asc

GE

GE Industrial Company

BC807

PNP Silicon Transistor (High current application Switching application)

Descriptions ?Highcurrentapplication ?Switchingapplication Features ?SuitableforAF-Driverstageandlowpoweroutputstages ?ComplementaryPairwithBC817

AUK

AUK corp

BC807

PNP Silicon AF Transistors

PNPSiliconAFTransistor ?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytype:BC817.../W,BC818.../W(NPN) ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC807

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors ?Powerdissipation310mW ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC807

SWITCHING AND AMPLIFIER APPLICATIONS

SWITCHINGANDAMPLIFIERAPPLICATIONS ?FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoBC817/BC818

UTCUnisonic Technologies

友順友順科技股份有限公司

BC807

TRANSISTOR (PNP)

FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

晶體管資料

  • 型號:

    BC807

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    表面帖裝型 (SMD)_低頻或音頻放大 (LF)_TR

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    100MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BC338,BC537,BC635,3DK14B,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    50

  • htest:

    100000000

  • atest:

    0.5

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號:

    BC807

  • 功能描述:

    兩極晶體管 - BJT Gen Pur Trans PNP,0.8A,45V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP/恩智浦
21+
SOT-23
600000
航宇科工半導(dǎo)體-中國航天科工集團(tuán)戰(zhàn)略合作伙伴!
詢價
NXP(恩智浦)
23+
標(biāo)準(zhǔn)封裝
8848
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
詢價
nxp
1818
SOT23
12000
絕對原裝正品
詢價
2015+
20000
公司現(xiàn)貨庫存
詢價
NXP
23+
SOT-23
31311
長期有貨,價格優(yōu)惠,歡迎來電咨詢。
詢價
NXP
16+/17+
SOT23
3500
原裝正品現(xiàn)貨供應(yīng)56
詢價
NEXPERIA/安世
21+
SOT-23
1825
NXP專家/只做原裝
詢價
NEXPERIA
21+20
SOT23
120000
全新原裝公司現(xiàn)貨
詢價
Nexperia/安世
21+
SOT-23
71623
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
詢價
NEXPERIA
22+
原廠
32000
詢價
更多BC807供應(yīng)商 更新時間2025-2-1 13:02:00