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BC817-16

NPNSiliconAFTransistors

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BC817-16

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryPNPTypesAvailable(BC807)

TRSYS

Transys Electronics

BC817-16

NPNgeneralpurposetransistor

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplement:BC807. FEATURES ?Highcurrent(max.500mA) ?Lowvoltage(max.45V). APPLICATIONS ?Generalpurposeswitchingandamplification.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC817-16

NPNSiliconAFTransistors

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC817-16

NPNSmallSignalTransistor310mW

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?IdeallySuitedforAutomaticInsertion ?

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC817-16

EPITAXAILPLANARNPNTRANSISTOR(forGeneralPurpose,Switching)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ComplementarytoBC807.

KECKEC CORPORATION

KEC株式會(huì)社

BC817-16

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807)

DIODES

Diodes Incorporated

BC817-16

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ?IdeallySuitedforAutomaticInsertion ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypesAvailable(BC807) ?ForswitchingandAFAmplifierApplications ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.GreenDevice(Note3)

DIODES

Diodes Incorporated

BC817-16

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

BC817-16

SurfacemountSi-EpitaxialPlanarTransistors

?Powerdissipation310mW ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC817-16

SurfacemountSi-EpitaxialPlanarTransistors

Features GeneralPurposeThreecurrentgaingroupsComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,AmplificationCommercialgradeSuffix-Q:AEC-Q101compliant1)Suffix-AQ:inAEC-Q101qualification1) MechanicalData1) Tapedan

Diotec

Diotec Semiconductor

BC817-16

300mW,NPNSmallSignalTransistor

FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacemountdevicetype -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeandRoHScomplian -PackingcodewithsuffixGmeans greencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

BC817-16

NPNTransistor

FEATURES ?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytypes:BC807(PNP)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC817-16

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)

RECTRON

Rectron Semiconductor

BC817-16

NPNGENERALPURPOSETRANSISTORS

VOLTAGE45VoltsPOWER225mWatts FEATURES ?Generalpurposeamplifierapplications ?NPNepitaxialsilicon,planardesign ?CollectorcurrentIC=500mA ?Pbfreeproductareavailable:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BC817-16

NPNGeneralPurposeAmplifier

FEATURES ●ForgeneralAFapplication. ●ComplementaryPNPtypeavailableBC807. ●Highcollectorcurrent,highcurrentgain. ●Lowcollector-emittersaturationvoltage.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

BC817-16

NPNPlasticEncapsulateTransistors

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC817-16

NPNSmallSignalTransistor310mW

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC817-16

TRANSISTOR(NPN)

FEATURES ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807(PNP)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

BC817-16

NPNSiliconAFTransistor

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    BC817-16W T/R

  • 功能描述:

    兩極晶體管 - BJT TRANS GP TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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con
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更多BC817-16W T/R供應(yīng)商 更新時(shí)間2024-12-29 14:16:00