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BC857S

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors ?Powerdissipation300mW ?PlasticcaseSOT-363 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC857S

PNPSiliconAFTransistorArray

PNPSiliconAFTransistorArrays ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage ?BC856S/U,BC857S:Fororientationinreelseepackageinformation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC857S

PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

PNPSiliconAFTransistorArray ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BC857S

PNPMulti-ChipGeneralPurposeAmplifier

PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto200mA.SourcedfromProcess68.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC857S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

Diotec

Diotec Semiconductor

BC857S

PNPSiliconAFTransistorArrays

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC857S

Multi-ChipTransistor

Features PowerdissipationPCM:0.3W(Tamp.=25°C) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-50V Operating&StoragejunctionTemperatureTj,Tstg:-55°C~+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC857S

PNPPlastic-EncapsulateTransistors300mW

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Multi-chipTransistor ?Ultra-SmallSurfaceMountPackage ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityL

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC857S

Multi-ChipTRANSISTOR(PNP)

FEATURES PowerdissipationPCM:300mW(Tamb=25℃) CollectorcurrentICM:-200mA Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

BC857S

DualPNPSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableBC847S. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KEC
24+
SOT-23
9200
新進(jìn)庫(kù)存/原裝
詢價(jià)
05+
原廠原裝
6051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
INFINEON
24+
SOT363
3600
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
詢價(jià)
INFINEON
23+
SOT-363
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
Infineo
24+
SOT-363
2500
原裝現(xiàn)貨熱賣(mài)
詢價(jià)
NXP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
詢價(jià)
INFINEON
2016+
SOT-363
3000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
詢價(jià)
CJ
2020+
SOT-363
985000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
ONSemiconductor
18+
NA
3071
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
更多BC857-RTK供應(yīng)商 更新時(shí)間2025-1-22 16:30:00