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BD135

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BD135

MediumPowerLinearandSwitchingApplications

Features ?ComplementtoBD136,BD138andBD140respectively Applications ?MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=0.15Adc ?BD135,137,139arecomplementarywithBD136,138,140

Motorola

Motorola, Inc

BD135

NPNSILICONTRANSISTORS

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

BD135

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES ?Highcurrent(max.1.5A) ?Lowvoltage(max.80V). APPLICATIONS ?Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BD135

NPNSILICONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

BD135

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

BD135

Complementarylowvoltagetransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

BD135

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?Highcurrent ?ComplementtotypeBD136/138/140 APPLICATIONS ?Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

SAVANTIC

Savantic, Inc.

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium?powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?Pb?FreePackagesareAvailable ?DCCurrentGain?hFE=40(Min)@

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD135

EPITAXIALPLANARNPNTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES ?HighCurrent.(Max.:1.5A) ?LowVoltage(Max.:45V) ?DCCurrentGain:hFE=40Min.@IC=0.15A ?ComplementarytoBD136.

KECKEC CORPORATION

KEC株式會(huì)社

BD135

PowerTransistorsNPNSilicon45,60,80Volts

Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?DCCurrentGain-hFE=40(Min)@IC=150mAdc ?ComplementarywithBD136,BD138,BD140

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BD135

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBD135,BD137,andBD139areNPNSiliconEpitaxialPlanarTransistorsdesignedforaudioamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

BD135

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?Highcurrent ?ComplementtotypeBD136/138/140 APPLICATIONS ?Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD135

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

BD135

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ?HighCurrent(1.5A) ?LowVoltage(80V)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

BD135

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

BD135

NPNPlasticEncapsulatedTransistor

FEATURES ?Highcurrent ?ComplementtoBD136,BD138andBD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BD135

NPNEPITAXIALSILICONPOWERTRANSISTORS

NPNEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD136,BD138,BD140

CDIL

Continental Device India Limited

BD135

SiliconNPNtransistorinaTO-126FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features ComplementtoBD136. Applications Mediumpowerlinearandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BCS-135-L-S-HE

  • 功能描述:

    CONN RCPT 35POS .100 SNGL HORZ

  • RoHS:

  • 類別:

    連接器,互連式 >> 板至板 - 接頭,插座,母插口

  • 系列:

    BCS

  • 產(chǎn)品變化通告:

    Non Rohs Product Obsolescence 25/Jul/2007

  • 標(biāo)準(zhǔn)包裝:

    10

  • 系列:

    DUBOX™, MezzSelect™,基礎(chǔ)增強(qiáng)型

  • 連接器類型:

    插座

  • 位置數(shù):

    46

  • 加載位置的數(shù)目:

    全部

  • 間距:

    0.100(2.54mm)

  • 行數(shù):

    2

  • 行間距:

    0.100(2.54mm)

  • 高度堆疊(配接):

    -

  • 板上方高度:

    0.335(8.50mm)

  • 安裝類型:

    通孔

  • 端子:

    焊接

  • 觸點(diǎn)表面涂層:

  • 觸點(diǎn)涂層厚度:

    30µin(0.76µm)

  • 特點(diǎn):

    -

  • 顏色:

    藍(lán)

  • 包裝:

    管件

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更多BCS-135-L-S-HE供應(yīng)商 更新時(shí)間2024-11-16 14:06:00