| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD802 | Plastic High Power Silicon PNP Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseupto30Wattaudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=1.0Adc ?BD802iscomplementarywithBD795,797,799,801 | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
BD802 | EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base,SiliconN-P-NandP-N-PVERSAWATTTransistors | Intersil Intersil Corporation | Intersil | |
BD802 | isc Silicon PNP Power Transistor DESCRIPTION ?Collector-EmitterSustainingVoltage- :VCEO(SUS)=-100V(Min) ?LowSaturationVoltage ?ComplementtoTypeBD801 APPLICATIONS ?Designedforawidevarietyofmedium-powerswitchingand amplifierapplications,suchasseriesandshuntregulators anddriverandout | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
BD802 | Plastic High Power Silicon PNP Transistor PlasticHighPowerSiliconPNPTransistor ...designedforuseupto30Wattaudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain— hFE=40(Min)@IC=1.0Adc ?BD802iscomplementarywithBD795,797,799,801 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
BD802 | Silicon PNP Power Transistor DESCRIPTION ?Collector-EmitterSustainingVoltage- :VCEO(SUS)=-100V(Min) ?LowSaturationVoltage ?ComplementtoTypeBD801 APPLICATIONS ?Designedforawidevarietyofmedium-powerswitchingand amplifierapplications,suchasseriesandshuntregulators anddriverandout | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
DiscreteSemiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMI American Microsemiconductor | AMMSEMI | ||
CATVamplifiermodules DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC). Bothmodulesareelectricallyidentical,onlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepass | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
860MHz,18.5dBgainpowerdoubleramplifier DESCRIPTION HybridamplifiermoduleinaSOT115Jpackageoperatingatasupplyvoltageof24V(DC). FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetallizationensuresexcellentrelia | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
CATVamplifiermodules DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC). Bothmodulesareelectricallyidentical,onlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepass | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
CATVamplifiermodule DESCRIPTION HybridamplifiermoduleinaSOT115Jpackageoperatingatasupplyvoltageof24V(DC). FEATURES ?Extremelyflatgainresponse ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetal | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
SILICONBRIDGERECTIFIERS PRV:50-1000Volts Io:8.0Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
SILICONBRIDGERECTIFIERS REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-8.0Amperes FEATURES ●Surgeoverloadrating-200amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any | HY HY ELECTRONIC CORP. | HY | ||
SILICONBRIDGERECTIFIERS | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
SiliconBridgeRectifiers8Ampsto10Amps SiliconBridgeRectifiers8Ampsto10Amps TheplasticmaterialcarriesU/Lrecognition94V-O | EDAL Edal Industries, Inc. | EDAL | ||
SILICONBRIDGERECTIFIERS | EIC EIC discrete Semiconductors | EIC | ||
SILICONBRIDGERECTIFIERS | HY HY ELECTRONIC CORP. | HY | ||
SILICONBRIDGERECTIFIERS | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司 | CHENDA | ||
SiliconBridgeRectifiers | HY HY ELECTRONIC CORP. | HY | ||
BridgeRectifier | FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司 | FORMOSA | ||
SILICONBRIDGERECTIFIERS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
8A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD544C,BD712,3CK010E,
- 最大耗散功率：
65W
- 放大倍數(shù)：
- 圖片代號：
B-10
- vtest：
100
- htest：
999900
- atest：
8
- wtest：
65
詳細(xì)參數(shù)
- 型號：
BD802
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
詢價 | |||
Intersil |
23+ |
原廠原裝 |
1296 |
全新原裝 |
詢價 | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
PHI |
1738+ |
TO-220 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
ISC |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
ON |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價 | ||
INTERSIL |
23+ |
TO-126 |
10000 |
公司只做原裝正品 |
詢價 | ||
INTERSIL |
2022+ |
TO-126 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
dsi |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 |
