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BF1105

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1105R

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1105R

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF1105WR

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF1105WR

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1107

N-channel single gate MOS-FETs

DESCRIPTION TheBF1107andBF1107Waredepletiontypefield-effecttransistorsinSOT23andSOT323packagesrespectively. ThelowlossandhighisolationcapabilitiesofthisMOS-FETprovideexcellentRFswitchingfunctions. Integrateddiodesbetweengateandsourceandbetweengateanddrainp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF1107

N-channel single gate MOSFET

Generaldescription TheBF1107isadepletiontypefield-effecttransistorinaSOT23package.ThelowlossandhighisolationcapabilitiesofthisMOSFETprovideexcellentRFswitchingfunctions.Integrateddiodesbetweengateandsourceandbetweengateanddrainprotectagainstexcessiveinput

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF1107

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF1107

N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?Low

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

BF1107W

N-channel single gate MOS-FETs

DESCRIPTION TheBF1107andBF1107Waredepletiontypefield-effecttransistorsinSOT23andSOT323packagesrespectively. ThelowlossandhighisolationcapabilitiesofthisMOS-FETprovideexcellentRFswitchingfunctions. Integrateddiodesbetweengateandsourceandbetweengateanddrainp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

晶體管資料

  • 型號:

    BF199

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    電視 (TV)_中頻放大 (ZF)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

  • 最大電流允許值:

  • 最大工作頻率:

    550MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BF224,BF311,BF373,BF597,3DG122C,3DG4302,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    A-33

  • vtest:

    0

  • htest:

    550000000

  • atest:

    0

  • wtest:

    0

產(chǎn)品屬性

  • 產(chǎn)品編號:

    BF199

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 晶體管類型:

    NPN

  • 電壓 - 集射極擊穿(最大值):

    25V

  • 頻率 - 躍遷:

    1.1GHz

  • 功率 - 最大值:

    350mW

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    38 @ 7mA,10V

  • 電流 - 集電極 (Ic)(最大值):

    50mA

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-226-3,TO-92-3 標準主體(!--TO-226AA)

  • 供應(yīng)商器件封裝:

    TO-92-3

  • 描述:

    RF TRANS NPN 25V 1.1GHZ TO92-3

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
24+
TO-92
6000
詢價
NATIONAL
24+/25+
68
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
PHILIPS
24+
TO-92
5000
原裝現(xiàn)貨假一罰十
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
Fairchild
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
詢價
PHILIPS
18+
TO92
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
NXP
1822+
TO-92
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
FAIR
23+
65480
詢價
NXP
24+
TO-92
65200
一級代理/放心采購
詢價
24+
TO-92
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
更多BF1供應(yīng)商 更新時間2025-4-14 16:30:00