零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BFG540X | isc Silicon NPN RF Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forhighestgainandlownoiseamplifier ?OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?ForESDprotectedhighgainlownoiseamplifier ?HighESDrobustness typicalvalue1000V(HBM) ?OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackage withvi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forhighestgainlownoiseamplifierat1.8GHz ?OutstandingGms=20dB NoiseFigureF=0.9dB ?Goldmetallizationforhighreliability ?SIEGET45-Line | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransisto NPNSiliconRFTransistor* ?ForESDprotectedhighgainlownoiseamplifier ?ExcellentESDperformancetypicalvalue1000V(HBM) ?OutstandingGms=20dB NoiseFigureF=0.9dB ?SIEGET?45-Line ?Pb-free(ROHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdesc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNwidebanddualtransistor DESCRIPTION NPNwidebandtransistorinaSOT89 plasticpackage. FEATURES ?Highgain ?Highoutputvoltage ?Lownoise ?Goldmetallizationensuresexcellentreliability ?Lowthermalresistance. APPLICATIONS ?VHF,UHFandCATVamplifiers. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNwidebandtransistor DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES ?Highgain ?Highoutputvoltage ?Lownoise ?Goldmetallizationensuresexcellentreliability ?Lowthermalresistance. APPLICATIONS ?VHF,UHFandCATVamplifiers. | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
iscSiliconNPNRFTransistor DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNRFTransistor DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPNwidebandtransistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION TheBFR540isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MA | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscSiliconNPNRFTransistor DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure APPLICATIONS ?DesignedforRFfrontendinwidebandapplicationsinthe GHzrange,suchasanaloganddigitalcellulartelephones, cordlesstelephones(CT1,CT2,DEC,etc.). | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
表面帖裝型 (SMD)_超高頻/特高頻 (UHF)
- 封裝形式:
貼片封裝
- 極限工作電壓:
20V
- 最大電流允許值:
0.12A
- 最大工作頻率:
9GHZ
- 引腳數(shù):
3
- 可代換的型號:
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號:
H-17
- vtest:
20
- htest:
9000000000
- atest:
0.12
- wtest:
0
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
標(biāo)準(zhǔn)封裝 |
46048 |
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障 |
詢價(jià) | ||
NXP/恩智浦 |
24+ |
SOT143 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價(jià) | ||
PHI |
24+ |
SOT-143 |
18000 |
詢價(jià) | |||
PHILIPS |
23+ |
SOT143 |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
PHILIPS |
678 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | ||||
PH |
2339+ |
SOT-23 |
21322 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | ||
NXP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價(jià) | ||
PHI |
16+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
PHI |
24+ |
SOT143 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價(jià) | ||
SOT-143 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) |