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BFP640FESD分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻規(guī)格書PDF中文資料
廠商型號(hào) |
BFP640FESD |
參數(shù)屬性 | BFP640FESD 封裝/外殼為4-SMD,扁平引線;包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類別為分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻;產(chǎn)品描述:RF TRANS NPN 4.7V 46GHZ 4TSFP |
功能描述 | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
文件大小 |
1.64277 Mbytes |
頁(yè)面數(shù)量 |
28 頁(yè) |
生產(chǎn)廠商 | Infineon Technologies AG |
企業(yè)簡(jiǎn)稱 |
Infineon【英飛凌】 |
中文名稱 | 英飛凌科技股份公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-3 23:00:00 |
BFP640FESD規(guī)格書詳情
BFP640FESD屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻。由英飛凌科技股份公司制造生產(chǎn)的BFP640FESD晶體管 - 雙極(BJT)- 射頻雙極型射頻晶體管是一種具有三個(gè)端子的半導(dǎo)體器件,用于在涉及射頻的設(shè)備中開關(guān)或放大信號(hào)。雙極結(jié)型晶體管設(shè)計(jì)為 NPN 或 PNP,特征參數(shù)包括晶體管類型、集射極擊穿電壓、躍遷頻率、噪聲系數(shù)、增益、功率、DC 電流增益和集電極電流。
Product Brief
The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 46 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
Features
? Robust very low noise amplifier based on Infineon′s
? ?reliable, high volume SiGe:C wafer technology
? 2 kV ESD robustness (HBM) due to integrated protection circuits
? High maximum RF input power of 21 dBm
? 0.6 dB minimum noise figure typical at 1.5 GHz,
? ?0.65 dB at 2.4 GHz, 6 mA
? 28.5 dB maximum gain Gms typical at 1.5 GHz,
? ?25 dB Gms at 2.4 GHz, 30 mA
? 26 dBm OIP3 typical at 2.4 GHz, 30 mA
? Thin small flat Pb-free (RoHS compliant) and halogen-free package
? ?with visible leads
? Qualification report according to AEC-Q101 available
Applications
As Low Noise Amplifier (LNA) in
? Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB, Bluetooth
? Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
? Multimedia applications such as mobile / portable TV, CATV, FM radio
? 3G/4G UMTS/LTE mobile phone applications
? ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
產(chǎn)品屬性
更多- 產(chǎn)品編號(hào):
BFP640FESDH6327XTSA1
- 制造商:
Infineon Technologies
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 晶體管類型:
NPN
- 電壓 - 集射極擊穿(最大值):
4.7V
- 頻率 - 躍遷:
46GHz
- 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):
0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
- 增益:
8B ~ 30.5dB
- 功率 - 最大值:
200mW
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
110 @ 30mA,3V
- 電流 - 集電極 (Ic)(最大值):
50mA
- 工作溫度:
150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
4-SMD,扁平引線
- 供應(yīng)商器件封裝:
4-TSFP
- 描述:
RF TRANS NPN 4.7V 46GHZ 4TSFP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
TSFP-4 |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
Infineon/英飛凌 |
23+ |
TSFP-4 |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TSFP4 |
6000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
INFINEON/英飛凌 |
NA |
275000 |
一級(jí)代理原裝正品,價(jià)格優(yōu)勢(shì),長(zhǎng)期供應(yīng)! |
詢價(jià) | |||
INFINEON |
22+ |
NA |
2600 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
TSFP-4 |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
SOT23-3 |
17814 |
原裝進(jìn)口假一罰十 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TSFP4 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
英飛凌 |
報(bào)價(jià)為準(zhǔn) |
INF |
2990 |
國(guó)外訂貨7-10個(gè)工作日 |
詢價(jià) |