| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN video transistor DESCRIPTION NPNsilicontransistorina3-leadplasticSOT54package. FEATURES ?Lowoutputcapacitance ?Highdissipation ?Highgainbandwidthproduct. APPLICATIONS ?Bufferstageincolourmonitorsbetweenthevideoamplifierandtheinputofthevideomodule ?Pre-s | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 6.5 GHz wideband transistor DESCRIPTION NPNwidebandtransistorina4-leaddual-emitterSOT172A2packagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES ?Optimumtemperatureprofileandexcellentreliabilitypropertiesensuredbyemitter-ballastingresistorsandapplicationofgoldsandwichm | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinafour-leaddual-emitterSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.Diffusedemitter-ballastingresistorsandtheapplicationofgoldsandwich metallizationensureanoptimumtemperatureprofileandexcellentreliabilitypropertie | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PNP 5 GHz wideband transistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PNP 5 GHz wideband transistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology. | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
PNP video transistor DESCRIPTION PNPvideotransistorinaSOT54plasticpackage. FEATURES ?Highgainbandwidth ?Goodthermalstability ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Pre-stagedriverbetweenvideoamplifierandvideomodule. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. FEATURES ?Lowoutputcapacitance ?Highgainbandwidth ?Highcurrentapplicability ?Goodthermalstability ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Pre-stagedriverinhighresolutioncolour | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT32(TO-126)package. FEATURES ?Lowoutputcapacitance ?Goodthermalstability ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Pre-stagedriverinhigh-resolutioncolourgraphicsmonitors. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT223plasticpackage. FEATURES ?Lowoutputcapacitance ?Highgainbandwidth ?Goodthermalstability ?Goldmetallizationensuresexcellentreliability ?Highcurrentapplicability ?Surfacemounting. APPLICATIONS ?Videoamplifiercascodedriver | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 1 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorhasextremelygoodintermodulationpropertiesandahighpowergain. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes. | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=7.5GHz F=1.3dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) NPNSiliconRFTransistor ?Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA ?CECC-typeavailable:CECC50002/259 | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPN Silicon RF Transistor NPNSiliconRFTransistor* ?Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdescription | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
超高頻/特高頻 （UHF）_功率放大 （L）
- 封裝形式：
貼片封裝
- 極限工作電壓：
19V
- 最大電流允許值：
0.15A
- 最大工作頻率：
6.5GHZ
- 引腳數(shù)：
4
- 可代換的型號：
- 最大耗散功率：
0.7W
- 放大倍數(shù)：
- 圖片代號：
G-127
- vtest：
19
- htest：
6500000000
- atest：
0.15
- wtest：
0.7
詳細參數(shù)
- 型號：
BFQ
- 制造商：
PHILIPS
- 制造商全稱：
NXP Semiconductors
- 功能描述：
NPN 6.5 GHz wideband transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飛利浦 |
2019+ |
SMD |
6992 |
原廠渠道 可含稅出貨 |
詢價 | ||
PHILIPS/飛利浦 |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價 | |||
PHILIPS |
23+ |
TO-55 |
750 |
專營高頻管模塊,全新原裝! |
詢價 | ||
PHILIPS |
20+ |
高頻管 |
29516 |
高頻管全新原裝主營-可開原型號增稅票 |
詢價 | ||
PHILIPS |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
PHI |
18+ |
2173 |
公司大量全新正品 隨時可以發(fā)貨 |
詢價 | |||
PHILIPS/飛利浦 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
PHILIPS |
1922+ |
TO-55 |
7823 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
NXP |
23+ |
N/A |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NXP |
21+ |
標準封裝 |
150000 |
進口原裝,訂貨渠道! |
詢價 |
