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BFR181

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR181

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181T

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181T

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TF

SiliconNPNPlanarRFTransistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181W

NPNSiliconRFTransistor)Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR181W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads ?Qualificationreport

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY181

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH181

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

晶體管資料

  • 型號:

    BFQ181

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    超高頻/特高頻 (UHF)_寬頻帶放大 (A)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    0.02A

  • 最大工作頻率:

    8GHZ

  • 引腳數(shù):

    2

  • 可代換的型號:

    BFQ77,BFR182(A),BFP182(A),DC5414,DC5415,BFQ66,BFQ645,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    F-34

  • vtest:

    20

  • htest:

    8000000000

  • atest:

    0.02

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號:

    BFQ181

  • 功能描述:

    TRANSISTOR | BJT | NPN | 20MA I(C) | MICRO-X

供應(yīng)商型號品牌批號封裝庫存備注價格
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
INFINEON
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
24+
2000
全新
詢價
NXP
2012+
SOT89
900000
全新原裝進口自己庫存優(yōu)勢
詢價
NXP
23+
原廠封裝
12300
詢價
NXP
12+
SOT89
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價
NXP
2015+
SOT89
19898
專業(yè)代理原裝現(xiàn)貨,特價熱賣!
詢價
NXP(PHILIPS)
16+
SOT89
30000
全新原裝現(xiàn)貨
詢價
NXP(PHILIPS)
2020+
SOT89
985000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
NXP
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
詢價
更多BFQ181供應(yīng)商 更新時間2025-1-9 17:00:00