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BFR181TF

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181W

NPNSiliconRFTransistor)Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR181W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads ?Qualificationreport

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY181

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    BFR181TF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Silicon NPN Planar RF Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
VIS
24+
3000
詢價
Vishay
23+
NA
19496
專做原裝正品,假一罰百!
 詢價
VISHAY
16+
SOT-23
12000
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
 詢價
VISHAY/TFK
24+
SOT-23
1440
原裝現(xiàn)貨假一罰十
 詢價
VISHAY
2023+
SOT-23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VISHAY
24+
SOT-23
18800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
VISHAY/威世
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY
24+
SOT-23
12000
原裝現(xiàn)貨假一賠十
 詢價
VISHAY/威世
2022
SOT23
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
VISHAY
SOT-23
22+
6000
十年配單,只做原裝
 詢價
更多BFR181TF供應(yīng)商 更新時間2025-2-24 16:30:00

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