首頁 >BFR183T>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

BFR183T

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183T

NPN Silicon RF Transistor

Preliminarydata ?Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz F=1.2dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183TF

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183TW

Silicon NPN Planar RF Transistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR183W

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentfrom2mAto30mA)

NPNSiliconRFTransistor ?Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz F=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR183W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR183W

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFY183

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY183ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH183

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BLF183XR

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BLF183XRS

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BMP183

Digitalpressuresensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    BFR183T

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Silicon NPN Planar RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon/英飛凌
2019+
SOT323
36000
原盒原包裝 可BOM配套
詢價(jià)
infinen
24+
SOT423
163000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
詢價(jià)
NXP/恩智浦
23+
SOT-523
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
INFINEON
24+
SOT-523
63200
新進(jìn)庫(kù)存/原裝
詢價(jià)
Infineon
24+
SC75
3600
絕對(duì)原裝!現(xiàn)貨熱賣!
詢價(jià)
INFINEON
16+
SOT423
15000
原裝現(xiàn)貨假一罰十
詢價(jià)
INFINEON
2016+
SOT523
60000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價(jià)
INFINEON
20+
SOT523
32970
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
更多BFR183T供應(yīng)商 更新時(shí)間2024-12-22 16:04:00