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BFR843EL3分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻規(guī)格書PDF中文資料

BFR843EL3
廠商型號(hào)

BFR843EL3

參數(shù)屬性

BFR843EL3 封裝/外殼為3-XFDFN;包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類別為分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻;產(chǎn)品描述:RF TRANS NPN 2.6V TSLP-3-10

功能描述

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
RF TRANS NPN 2.6V TSLP-3-10

封裝外殼

3-XFDFN

文件大小

1.52064 Mbytes

頁(yè)面數(shù)量

27 頁(yè)

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

原廠下載下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 20:00:00

BFR843EL3規(guī)格書詳情

BFR843EL3屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻。由英飛凌科技股份公司制造生產(chǎn)的BFR843EL3晶體管 - 雙極(BJT)- 射頻雙極型射頻晶體管是一種具有三個(gè)端子的半導(dǎo)體器件,用于在涉及射頻的設(shè)備中開關(guān)或放大信號(hào)。雙極結(jié)型晶體管設(shè)計(jì)為 NPN 或 PNP,特征參數(shù)包括晶體管類型、集射極擊穿電壓、躍遷頻率、噪聲系數(shù)、增益、功率、DC 電流增益和集電極電流。

Product Brief

The BFR843EL3 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 ? at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in a very small thin leadless plastic package, ideal for modules.

Features

? Low noise broadband NPN RF transistor based on

? ?Infineon′s reliable, high volume SiGe:C bipolar technology

? High maximum RF input power and ESD robustness

? Unique combination of high RF performance, robustness

? ?and ease of application circuit design

? Low noise figure: NFmin = 1 dB at 2.4 GHz

? ?and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA

? High gain |S21|2 = 22 dB at 2.4 GHz

? ?and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA

? OIP3 = 22 dBm at 2.4 GHz and 5.5 GHz, 1.8 V, 25 mA

? Ideal for low voltage applications e.g. VCC = 1.2 V

? ?and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding

? ?collector resistor)

? Low power consumption, ideal for mobile applications

? Pb-free (RoHS compliant) and halogen-free very small

? ?thin leadless plastic package

Applications

As Low Noise Amplifier (LNA) in

? Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA

? Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage?LNA)

? Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz

? ISM bands up to 10 GHz

? Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    BFR843EL3E6327XTSA1

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 晶體管類型:

    NPN

  • 電壓 - 集射極擊穿(最大值):

    2.6V

  • 增益:

    25.5dB

  • 功率 - 最大值:

    125mW

  • 電流 - 集電極 (Ic)(最大值):

    55mA

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    3-XFDFN

  • 供應(yīng)商器件封裝:

    PG-TSLP-3-10

  • 描述:

    RF TRANS NPN 2.6V TSLP-3-10

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INFINEON/英飛凌
23+
NA/
115240
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
INFINEON/英飛凌
24+
NA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
Infineon/英飛凌
23+
TSLP-3
25630
原裝正品
詢價(jià)
Infineon/英飛凌
21+
TSLP-3
6000
原裝現(xiàn)貨正品
詢價(jià)
Infineon/英飛凌
21+
TSLP-3
6820
只做原裝,質(zhì)量保證
詢價(jià)
INFINEON/英飛凌
NA
8600
原裝正品,歡迎來(lái)電咨詢!
詢價(jià)
Infineon
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
INFINEON/英飛凌
22+
TSLP-3
20000
原裝現(xiàn)貨,實(shí)單支持
詢價(jià)
ADI
23+
TSLP-3
8000
只做原裝現(xiàn)貨
詢價(jià)
ADI
23+
TSLP-3
7000
詢價(jià)