零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BFS540 | NPN 9 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforRFwidebandamplifierapplicationssuchassatelliteTVsystemsandRFportablecommunicationequipmentwithsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
BFS540 | Low Noise Figure DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz ?HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS ?DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
BFS540 | Silicon NPN RF Transistor DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz ?HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS ?DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BFS540 | RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | |
NPN 9 GHz wideband transistor | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN 9 GHz wideband transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
NPN 9 GHz wideband transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
包裝:托盤(pán) 封裝/外殼:SC-70,SOT-323 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 15V 9GHZ SOT323-3 | NXP USA Inc. NXP USA Inc. | NXP USA Inc. | ||
NPNSiGewidebandtransistor DESCRIPTION NPNSiGewidebandtransistorforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Verylownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance ?45GHzSiGeprocess. APPLICATI | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
A35dBGain-SlopedLNBI.F.AmplifierforDirectBroadcastSatelliteTelevisionApplicationsusingtheBGA430&BGB540SiliconMMICs Description TheBGA430isabroadbandhighgainamplifierbaseduponInfineonTechnologies’SiliconBipolarTechnologyB6HF.HousedinasmallSOT363packagethisSiliconMonolithicMicrowaveIntegratedCircuit(MMIC)requiresveryfewexternalcomponentsduetotheintegratedbiasingconcept. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ActiveBiasedRFTransistor Description SIEGET?-45NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Gms=18dBat1.8GHz ?SmallSOT343package ?Currenteasyadjustablebyanexternalresistor ?Opencollectoroutpu | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
BGB540asa1.85GHzLowNoiseAmplifier BGB540asa1.85GHzLowNoiseAmplifier | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SCHOTTKYRECTIFIERVOLTAGE40VoltsCURRENT500mAmpers | RECTRON Rectron Semiconductor | RECTRON | ||
ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING | edi Electronic devices inc. | edi | ||
250WATTS(AC)DC/DCSINGLEOUTPUT 250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg | POWERBOX Powerbox manufactures | POWERBOX | ||
8-BitCMOSMicrocontroller AdvanceInformation ?Enhanced8-bitC500CPU –Fullsoftware/toolsetcompatibletostandard80C51/80C52microcontrollers ?12MHzexternaloperatingfrequency –500nsinstructioncycle ?Built-inPLLforUSBsynchronization ?On-chipOTPprogrammemory –C540U:4Kbyte –C54 | SIEMENSSiemens Semiconductor Group 西門(mén)子德國(guó)西門(mén)子股份公司 | SIEMENS | ||
8-BitCMOSMicrocontroller | SIEMENSSiemens Semiconductor Group 西門(mén)子德國(guó)西門(mén)子股份公司 | SIEMENS | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSchottkyBarrierRectifiers -Built-instrainrelief. -Metalsiliconjunctionwithguardring. Features -Siliconepitaxialplanarchips. -Foruseinlowvoltage,highfrequencyinverters freewheelingandpolarityprotection. -Highsurgeandcurrentcapability. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠(chǎng)家:
- 制作材料:
Si-NPN
- 性質(zhì):
表面帖裝型 (SMD)_超高頻/特高頻 (UHF)
- 封裝形式:
貼片封裝
- 極限工作電壓:
20V
- 最大電流允許值:
0.12A
- 最大工作頻率:
9GHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號(hào):
H-15
- vtest:
20
- htest:
9000000000
- atest:
0.12
- wtest:
0
詳細(xì)參數(shù)
- 型號(hào):
BFS540
- 制造商:
NXP Semiconductors
- 功能描述:
TRANSISTOR NPN 9GHZ SOT-323
- 功能描述:
TRANSISTOR, NPN, 9GHZ, SOT-323
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NXP |
23+ |
SOT23 |
66800 |
全新原裝正品 |
詢(xún)價(jià) | ||
NXP/恩智浦 |
21+ |
SOT-323 |
600000 |
航宇科工半導(dǎo)體-中國(guó)航天科工集團(tuán)戰(zhàn)略合作伙伴! |
詢(xún)價(jià) | ||
NXP |
18+ |
SOT-323 |
89000 |
全新原裝現(xiàn)貨,假一罰十 |
詢(xún)價(jià) | ||
NXP/恩智浦 |
24+ |
SOT323 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠(chǎng)一手渠道聯(lián)系 |
詢(xún)價(jià) | ||
NXP恩智浦/PHILIPS飛利浦 |
24+ |
SOT-323 |
366000 |
新進(jìn)庫(kù)存/原裝 |
詢(xún)價(jià) | ||
PHILIPS |
23+ |
SOT323 |
12300 |
詢(xún)價(jià) | |||
PHI |
05+ |
原廠(chǎng)原裝 |
50051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
原廠(chǎng)正品 |
23+ |
SOT-323 |
60000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
PHILIPS |
23+ |
SOT-323 |
6680 |
全新原裝優(yōu)勢(shì) |
詢(xún)價(jià) | ||
NXP |
1716+ |
SOT-323 |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) |