BGA855N6RF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

BGA855N6屬于RF/IF射頻/中頻RFID的射頻放大器。由英飛凌科技股份公司制造生產(chǎn)的BGA855N6射頻放大器在射頻應(yīng)用中，射頻放大器產(chǎn)品可用于信號(hào)增益和緩沖。這些產(chǎn)品與通用運(yùn)算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。

1 Features

? Insertion power gain: 17.8 dB

? Low noise figure: 0.60 dB

? Low current consumption: 4.8mA

? High linearity performance IIP3: 0 dBm

? Operating frequencies: 1164 - 1300 MHz

? Supply voltage: 1.1 V to 3.3 V

? Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)

? B9HF Silicon Germanium technology

? RF output internally matched to 50 Ohm

? Only one external matching component needed

? 2kV HBM ESD protection (including AI-pin)

? Pb-free (RoHS compliant) package

? Specifically designed for:

- L2/L5 GPS Signals

- E5a/E5b/E6 Galileo Signals

- G2/G3 Glonass Signals

- B2/B3 Beidou Signals

Description

The BGA855N6 is a front-end low noise amplifier for GPS L5 and L2, Galileo E5a, E5b, E6, Glonass G3, G2 and

Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and

0.60 dB noise figure at a current consumption of 4.8mA in the application configuration described in Chapter 4.

The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V

to 3.3 V supply voltage (device optimized for 1.8V operation / also prepared to support 1.2V and 2.8V operation).

OFF-state can be enabled by PON pin.