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BH6056GU

Power management LSI for mobile phone

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BH6056GU-E2

包裝:卷帶(TR) 封裝/外殼:36-VFBGA 類別:集成電路(IC) 電源管理 - 專用 描述:IC POWER MGMT LSI 36VCSPH

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

C6056A

12SP207/28TCPEPVCComputerCable

GENERALGeneral Electric

通用電氣公司美國(guó)通用電氣公司

CBT-BGA-6056

Automatedprobemanufacturingenableslowcostandshortleadtime

IRONWOOD

Ironwood Electronics.

CEB6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6056

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BH6056GU

  • 制造商:

    ROHM

  • 制造商全稱:

    Rohm

  • 功能描述:

    Power management LSI for mobile phone

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ROHM現(xiàn)貨
2022+
36-VFBGA
350000
專注工業(yè)、軍工級(jí)別芯片,十五年優(yōu)質(zhì)供應(yīng)商
詢價(jià)
只做原裝
21+
BGA
36520
一級(jí)代理/放心采購(gòu)
詢價(jià)
ROHM
20+
36-BGA
2500
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
Rohm Semiconductor
22+
36BGA (3.5x3.5)
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Rohm Semiconductor
21+
36BGA (3.5x3.5)
13880
公司只售原裝,支持實(shí)單
詢價(jià)
Rohm Semiconductor
23+
36-BGA3.5x3.5
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
Rohm Semiconductor
23+
36-BGA3.5x3.5
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
Rohm Semiconductor
23+/24+
36-VFBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價(jià)
Rohm Semiconductor
24+
36-VFBGA
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
ROHM
23+
BGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
更多BH6056GU供應(yīng)商 更新時(shí)間2024-11-8 14:00:00